Datasheet TCST1103 (Vishay) - 2

TCST1103, TCST1202, TCST1300
www.vishay.com Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT (EMITTER)
Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current tp ≤ 10 μs IFSM 3 A Power dissipation Tamb ≤ 25 °C PV 100 mW Junction temperature Tj 100 °C
OUTPUT (DETECTOR)
Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 200 mA Power dissipation Tamb ≤ 25 °C PV 150 mW Junction temperature Tj 100 °C
ABSOLUTE MAXIMUM RATINGS
400 300 Coupled device 200 Phototransistor IR-diode 100 P - Power Dissipation (mW) 0 0 30 60 90 120 150 95 11088 T amb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT COUPLER
TCST1103 CTR 10 20 % Current transfer ratio VCE = 5 V, IF = 20 mA TCST1202 CTR 5 10 % TCST1300 CTR 1.25 2.5 % TCST1103 IC 2 4 mA Collector current VCE = 5 V, IF = 20 mA TCST1202 IC 1 2 mA TCST1300 IC 0.25 0.5 mA IF = 20 mA, IC = 1 mA TCST1103 VCEsat 0.4 V Collector emitter saturation I voltage F = 20 mA, IC = 0.5 mA TCST1202 VCEsat 0.4 V IF = 20 mA, IC = 0.1 mA TCST1300 VCEsat 0.4 V Resolution, path of the shutter TCST1103 s 0.6 mm crossing the radiant sensitive ICrel = 10 % to 90 % TCST1202 s 0.4 mm zone TCST1300 s 0.2 mm Rev. 2.0, 24-Aug-11
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