Datasheet MDF11N65B (Magnachip) - 2
| Hersteller | Magnachip |
| Beschreibung | N-Channel MOSFET 650V, 12A, 0.65Ω in TO-220F package |
| Seiten / Seite | 6 / 2 — 1 1. Ordering Information. N65. Part Number. Temp. Range. Package. … |
| Dateiformat / Größe | PDF / 1.1 Mb |
| Dokumentensprache | Englisch |
1 1. Ordering Information. N65. Part Number. Temp. Range. Package. Packing. RoHS Status. N -. c ha. nnel
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Textversion des Dokuments
M DF 1 1 Ordering Information N65 Part Number Temp. Range Package Packing RoHS Status B
MDF11N65BTH -55~150oC TO-220F Tube Halogen Free
N - c ha nnel Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit MOS Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 650 - -
FET
V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 - 4.0
6
Drain Cut-Off Current IDSS VDS = 650V, VGS = 0V - - 1 μA
5 0
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 6A 0.55 0.65 Ω Forward Transconductance gfs VDS = 30V, ID = 6A - 8.7 - S
Dynamic Characteristics
Total Gate Charge Qg - 31 - Gate-Source Charge Qgs VDS = 520V, ID = 12.0A, VGS = 10V(3) - 9.2 - nC Gate-Drain Charge Qgd - 12.6 - Input Capacitance Ciss - 1650 - Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - 7.7 - pF Output Capacitance Coss - 180 - Turn-On Delay Time td(on) - 27 - Rise Time tr V - 52 - GS = 10V, VDS = 325V, ID = 12.0A, ns RG = 25Ω(3) Turn-Off Delay Time td(off) - 132 - Fall Time tf - 48 -
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to I Source Diode Forward Current S - 12 - A Source-Drain Diode Forward Voltage VSD IS = 12.0A, VGS = 0V - - 1.4 V Body Diode Reverse Recovery Time trr - 355 - ns IF = 12.0A, di/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr - 3.6 - μC Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤12.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C 4. L=9.62mH, IAS=12.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C, Jan. 2021. Version 1.2 2 Magnachip Semiconductor Ltd.
MDF11N65BTH -55~150oC TO-220F Tube Halogen Free
N - c ha nnel Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit MOS Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 650 - -
FET
V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 - 4.0
6
Drain Cut-Off Current IDSS VDS = 650V, VGS = 0V - - 1 μA
5 0
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 6A 0.55 0.65 Ω Forward Transconductance gfs VDS = 30V, ID = 6A - 8.7 - S
Dynamic Characteristics
Total Gate Charge Qg - 31 - Gate-Source Charge Qgs VDS = 520V, ID = 12.0A, VGS = 10V(3) - 9.2 - nC Gate-Drain Charge Qgd - 12.6 - Input Capacitance Ciss - 1650 - Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - 7.7 - pF Output Capacitance Coss - 180 - Turn-On Delay Time td(on) - 27 - Rise Time tr V - 52 - GS = 10V, VDS = 325V, ID = 12.0A, ns RG = 25Ω(3) Turn-Off Delay Time td(off) - 132 - Fall Time tf - 48 -
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to I Source Diode Forward Current S - 12 - A Source-Drain Diode Forward Voltage VSD IS = 12.0A, VGS = 0V - - 1.4 V Body Diode Reverse Recovery Time trr - 355 - ns IF = 12.0A, di/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr - 3.6 - μC Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤12.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C 4. L=9.62mH, IAS=12.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C, Jan. 2021. Version 1.2 2 Magnachip Semiconductor Ltd.