AOK30B135W11350V, 30A Alpha IGBT TM with DiodeGeneral DescriptionProduct Summary • Latest AlphaIGBT (α IGBT) technology VCE • Best in Class V 1350V CE(SAT) enables high efficiencies • Low turn-off switching loss due to fast turn-off time IC (TC=100°C) 30A • Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25°C) 1.8V • Better thermal management • High surge current capability • Minimal gate spike due to high input capacitance Applications • Induction Cooking • Rice Cookers • Microwave Ovens • Other soft switching applications Top View C TO-247 G E E C AOK30B135W1 G Orded rablb e Partt NuN mu beb rPackageg TyT py epFoF ro mMinin mumu Orded r Quau ntn it tyt AOK30B135W1 TO247 Tube 240 Absolute Maximum Ratings TA=25°C unless otherwise noted ParameterSymbolAOK30B135W1Units Collector-Emitter Voltage V CE 1350 V V Gate-Emitter Voltage GE ±30 V Continuous Collector TC=25°C 60 I C A Current TC=100°C 30 Pulsed Collector Current, Limited by TJmax I Cpulse 120 A Non repetitive peak collector currentA I CSM 200 A Turn off SOA, VCE 600V, Limited by T ≤ Jmax I LM 120 A Continuous Diode TC=25°C 60 I F A Forward Current TC=100°C 30 Diode Pulsed Current, Limited by TJmax I Fpulse 120 A TC=25°C 340 P D W Power Dissipation TC=100°C 170 Junction and Storage Temperature Range T J , T STG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds T L 300 °C Thermal Characteristics ParameterSymbolAOK30B135W1Units Maximum Junction-to-Ambient R θ JA 40 °C/W Maximum IGBT Junction-to-Case R θ JC 0.44 °C/W Maximum Diode Junction-to-Case R θ JC 1.20 °C/W Note A: Capacitor charging saturation current limited by Tjmax<175°C and tp<3µs Rev.2.0: January 2015 www.aosmd.com Page 1 of 8