Datasheet Si4936DY (Vishay) - 2

Si4936DY Vishay Siliconix
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 V Gate-Body Leakage I V GSS DS = 0 V, VGS = "20 V "100 nA VDS = 30 V, VGS = 0 V 1 Zero Gate V oltage V Drain Current IDSS I mA m VDS = 30 V, VGS = 0 V, TJ = 55C 25 On-State Drain CurrentB ID(on) VDS w 5 V, VGS = 10 V 20 A VGS = 10 V, ID = 5.8 A 0.030 0.037 Drain-Source - On-State ResistanceB Resistance rDS(on) rDS(on) W VGS = 4.5 V, ID = 4.7 A 0.042 0.055 Forward TransconductanceB gfs VDS = 15 V, ID = 5.8 A 13 S Diode Forward VoltageB VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 V Total Gate Charge Qg 18 25 Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 5.8 A 4.5 nC Gate-Drain Charge Qgd 2.5 Turn-On Delay Time td(on) 10 16 Rise Time tr VDD = 15 V, R DD L = 15 L W 10 16 Turn-Off Delay Time t ID ^ 1 A, VGEN = 10 V, RG = 6 W d(off) 27 40 ns Fall Time tf 24 35 Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/ms 45 80 Notes A. Pulse test; pulse width v 300 ms, duty cycle v 2%. B. Guaranteed by design, not subject to production testing. Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-49532—Rev. D, 02-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
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