Datasheet PMV65XP (Nexperia) - 2

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Nexperia PMV65XP 20 V, single P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol
1 G gate 3 D 2 S source G 3 D drain 1 2
TO-236AB (SOT23)
S 017aaa257
6. Ordering information Table 3. Ordering information Type number Package Name Description Version
PMV65XP TO-236AB plastic surface-mounted package; 3 leads SOT23
7. Marking Table 4. Marking codes Type number Marking code [1]
PMV65XP %M9 [1] % = placeholder for manufacturing site code
8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage -12 12 V ID drain current VGS = -4.5 V; Tsp = 25 °C - -4.3 A VGS = -4.5 V; Tamb = 25 °C [1] - -2.8 A VGS = -4.5 V; Tamb = 100 °C [1] - -1.8 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -16 A Ptot total power dissipation Tamb = 25 °C [2] - 480 mW [1] - 833 mW Tsp = 25 °C - 4165 mW PMV65XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 12 February 2013 2 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information