Datasheet B0540W (Taiwan Semiconductor)

HerstellerTaiwan Semiconductor
BeschreibungSOD-123, 40V, 0.5A, Schottky Diode
Seiten / Seite5 / 1 — B0520LW/B0530W/B0540W. 500mA, 20V - 40V Schottky Barrier Diode. FEATURES. …
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DokumentenspracheEnglisch

B0520LW/B0530W/B0540W. 500mA, 20V - 40V Schottky Barrier Diode. FEATURES. KEY PARAMETERS. PARAMETER. VALUE. UNIT. APPLICATIONS

Datasheet B0540W Taiwan Semiconductor

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B0520LW/B0530W/B0540W
Taiwan Semiconductor
500mA, 20V - 40V Schottky Barrier Diode FEATURES KEY PARAMETERS
● Low power loss, high current capability, low VF
PARAMETER VALUE UNIT
● Surface mount device type I ● F 500 mA Moisture sensitivity level: level 1, per J-STD-020 ● V RoHS Compliant RRM 20 - 40 V ● Halogen-free according to IEC 61249-2-21 IFSM 5.5 A TJ MAX 125 °C
APPLICATIONS
Package SOD-123 ● Switching mode power supply (SMPS) Configuration Single Die ● Adapters ● Lighting application
MECHANICAL DATA
● Case: SOD-123 ● Molding compound meets UL 94 V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Polarity: Indicated by cathode band ● Weight: 10.0mg (approximately)
SOD-123 ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER SYMBOL B0520LW B0530W B0540W UNIT
Marking code on the device SD SE SF Power Dissipation PD 410 mW Repetitive peak reverse voltage VRRM 20 30 40 V Reverse voltage, total rms value VR(RMS) 14 21 28 V Forward current IF 500 mA Surge peak forward current, 8.3ms single I half sine-wave superimposed on rated load FSM 5.5 A Junction temperature TJ - 55 to +125 °C Storage temperature TSTG - 55 to +125 °C 1 Version:J2112