Datasheet DMTH4008LFDFWQ (Diodes) - 4
Hersteller | Diodes |
Beschreibung | 40V +175?C N-Channel Enhancement Mode MOSFET |
Seiten / Seite | 8 / 4 — DMTH4008LFDFWQ. www.diodes.com |
Dateiformat / Größe | PDF / 484 Kb |
Dokumentensprache | Englisch |
DMTH4008LFDFWQ. www.diodes.com

Modelllinie für dieses Datenblatt
Textversion des Dokuments
DMTH4008LFDFWQ
30.0 30 V = 4.0V GS V = 5.0V DS V = 4.5V 25.0 GS 25 ) V = 6.0V ) A GS ( A ( T V = 10.0V GS T 20.0 N 20 N E E R V = 3.5V R R GS R U U 15.0 C 15 C NI NI A A T R R J = 125oC 10.0 D 10 , D TJ = 150oC T , I D J = 85oC I D V = 3.0V V = 2.8V GS T 5.0 GS 5 J = 175oC TJ = 25oC T J = -55oC 0 0.0 0 0.5 1 1.5 2 2.5 3 1 1.5 2 2.5 3 3.5 4 VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic ) 0.020 0.2 (Ω (Ω E E 0.018 C C N N 0.016 TA TA S S I V = 4.5V I 0.15 S S 0.014 GS E E R R - - 0.012 ON ON E 0.010 E 0.1 C C R R 0.008 V = 10V GS OU OU S S- - 0.006 N NI I A A 0.05 I = 10A D 0.004 R R D D , 0.002 ON) ON) ( DS 0.000 DS 0 R R 0 5 10 15 20 25 30 0 4 8 12 16 20 I D, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) Figure 3. Typical On-Resistance vs. Drain Current and Figure 4. Typical Transfer Characteristic Gate Voltage ) (Ω 0.018 E 2.2 E C C V = 10V GS N 2 N 0.016 TA TA SI S S 1.8 I 150oC S 175oC E 0.014 E R- ) V = 10V, I = 10A R 1.6 GS D - D ON ON 0.012 E 1.4 E 125oC C C R ALIZE R M 0.01 1.2 R 85oC OU OU S O - S N 1 V = 4.5V, I = 8.5A - ( 25oC NI GS D 0.008 NI A A R 0.8 R -55oC D D 0.006 , 0.6 , ON)( ON)( 0.004 DS 0.4 R DS 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 175 R I T D, DRAIN CURRENT (A) J, JUNCTION TEMPERATURE (oC) Figure 5. Typical On-Resistance vs. Drain Current and Figure 6. On-Resistance Variation with Temperature Temperature DMTH4008LFDFWQ 4 of 8 May 2025 Document number: DS39771 Rev. 5 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.