Datasheet DMHC4035LSDQ (Diodes) - 3

DMHC4035LSDQ Electrical Characteristics N-CHANNEL
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 40 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 40V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V
T ON CHARACTERISTICS (Note 7) C N
Gate Threshold Voltage VGS(TH) 1 — 3 V VDS = VGS, ID = 250μA
U OI
— 26 45 VGS = 10V, ID = 3.9A Static Drain-Source On-Resistance R mΩ
D T
DS(ON) — 35 58 VGS = 4.5V, ID = 3.5A
O A
Diode Forward Voltage VSD — 0.7 1 V VGS = 0V, IS = 1.25A
R MT DYNAMIC CHARACTERISTICS (Note 8) P RCU
Input Capacitance Ciss — 574 — V
W O
DS = 20V, VGS = 0V,
D
Output Capacitance C pF oss — 87.8 — f = 1MHz
E FO
Reverse Transfer Capacitance Crss — 38.7 —
N NI R
Gate Resistance Rg — 1.6 — Ω VDS = 0V, VGS = 0V, f = 1MHz
EP
Total Gate Charge (VGS = 4.5V) Qg — 5.9 —
C
Total Gate Charge (VGS = 10V) Qg — 12.5 —
NW
nC VDS = 20V, ID = 3.9A Gate-Source Charge Q
AE
gs — 1.7 —
VN
Gate-Drain Charge Qgd — 2.2 —
D
Turn-On Delay Time tD(ON) — 3.1 —
A
Turn-On Rise Time t V R — 2.6 — ns DD = 20V, VGS = 10V, Turn-Off Delay Time tD(OFF) — 15 — RL = 20Ω, RG = 6Ω Turn-Off Fall Time tF — 5.5 — Reverse Recovery Time tRR — 6.5 — ns IF = 3.9A, di/dt = 500A/μs Reverse Recovery Charge QRR — 1.2 — nC
Electrical Characteristics P-CHANNEL
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS -40 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS — — -1 μA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(TH) -1 — -3 V VDS = VGS, ID = -250μA — 49 65 VGS = -10V, ID = -4.2A Static Drain-Source On-Resistance RDS(ON) mΩ — 73 100 VGS = -4.5V, ID = -3.3A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss — 587 — pF VDS = -20V, VGS = 0V, Output Capacitance Coss — 88.1 — pF f = 1MHz Reverse Transfer Capacitance Crss — 40.2 — pF Gate Resistance Rg — 12.3 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg — 5.4 — nC Total Gate Charge (VGS = -10V) Qg — 11.1 — nC VDS = -20V, ID = -4.2A Gate-Source Charge Qgs — 1.5 — nC Gate-Drain Charge Qgd — 2 — nC Turn-On Delay Time tD(ON) — 3.6 — ns Turn-On Rise Time t V R — 2.9 — ns DD = -15V, VGS = -10V, Turn-Off Delay Time tD(OFF) — 36.3 — ns RG = 6Ω, ID = -1A Turn-Off Fall Time tF — 15.3 — ns Reverse Recovery Time tRR — 15.5 — ns IF = -4.2A, di/dt = 500A/μs Reverse Recovery Charge QRR — 16.9 — nC Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMHC4035LSDQ 3 of 9 March 2018 Document number: DS37219 Rev. 2 - 2
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