Datasheet MCH6613 (ON Semiconductor) - 2

MCH6613
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings
min typ Unit max [N-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs | ID=1mA, VGS=0V
VDS=30V, VGS=0V 30 VGS=±8V, VDS=0V
VDS=10V, ID=100μA 0.4 VDS=10V, ID=80mA 150 V
1 μA ±10 μA 1.3
220 V
mS RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Ω 7.0 pF 5.9 pF 2.3 pF td(on) 19 ns Rise Time tr 65 ns Turn-OFF Delay Time td(off) 155 ns Fall Time tf 120 ns Total Gate Charge Qg 1.58 nC Gate to Source Charge Qgs 0.26 nC Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=150mA, VGS=0V V(BR)DSS
IDSS
IGSS ID=-1mA, VGS=0V VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA 0.31
0.87 nC
1.2 V -1 μA ±10 μA [P-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance -30 V VDS=-30V, VGS=0V
VGS=±8V, VDS=0V VGS(off)
| yfs | VDS=-10V, ID=-100μA -0.4 VDS=-10V, ID=-50mA 80 RDS(on)1 ID=-50mA, VGS=-4V 8 10.4 Ω RDS(on)2 ID=-30mA, VGS=-2.5V 11 15.4 Ω RDS(on)3 ID=-1mA, VGS=-1.5V 27 54 Ciss -1.4
110 V
mS Ω 7.5 pF Output Capacitance Coss 5.7 pF Reverse Transfer Capacitance Crss 1.8 pF Turn-ON Delay Time td(on) 24 ns Rise Time tr 55 ns Turn-OFF Delay Time td(off) 120 ns Fall Time tf 130 ns Total Gate Charge Qg 1.43 nC Gate to Source Charge Qgs 0.18 nC Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=-10V, f=1MHz See specified Test Circuit. VDS=-10V, VGS=-10V, ID=-100mA 0.25
IS=-100mA, VGS=0V -0.83 nC
-1.2 V No.6920-2/8