Datasheet AP6A255Q (Diodes) - 4
| Hersteller | Diodes |
| Beschreibung | 5.5V to 100V Input Automotive Grade, 2.5A Standard Buck Converter |
| Seiten / Seite | 18 / 4 — AP6A255Q/AP6A355Q. Absolute Maximum Ratings. Symbol. Parameter. Rating. … |
| Dateiformat / Größe | PDF / 1.3 Mb |
| Dokumentensprache | Englisch |
AP6A255Q/AP6A355Q. Absolute Maximum Ratings. Symbol. Parameter. Rating. Unit. ESD Susceptibility. Package Thermal Information
Modelllinie für dieses Datenblatt
Textversion des Dokuments
AP6A255Q/AP6A355Q Absolute Maximum Ratings
(@ TA = +25°C, unless otherwise specified.) (Note 4)
Symbol Parameter Rating Unit
VIN Supply Voltage -0.3 to +110 V VSW Switch Node Voltage -1.0 to VIN +0.3 (DC) V VSW Switch Node Voltage -2.5 to VIN +5 (ns) V VBST Bootstrap Voltage VSW -0.3 to VSW +6.0 V VEN Enable/UVLO Voltage -0.3V to +6 V VFB Feedback Voltage -0.3V to +6.0 V TST Storage Temperature -65 to +150 °C TJ Junction Temperature +150 °C TL Lead Temperature +300 °C
ESD Susceptibility
(Note 5) HBM Human Body Model ±1000 V CDM Charged Device Model ±1500 V Notes: 4. Stresses greater than the 'Absolute Maximum Ratings' specified above can cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability can be affected by exposure to absolute maximum rating conditions for extended periods of time. 5. Semiconductor devices are ESD sensitive and can be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.
Package Thermal Information
(Note 6)
Symbol Parameter Rating Unit
θJA Junction to Ambient SO-8EP 39 °C/W θJC(TOP) Junction to Case (Top) SO-8EP 13 °C/W θJB Junction to Board (Bottom) SO-8EP 13 °C/W ψJT Junction to Top Characterization Parameter SO-8EP 4.5 °C/W ψJB Junction to Board Characterization Parameter SO-8EP 12.5 °C/W θJC(BOT) Junction to Case (Bottom) SO-8EP 3.5 °C/W Note: 6. Device mounted on FR-4 substrate, 1” sq. PC board, 2oz copper, with minimum recommended pad layout.
Recommended Operating Conditions
(@TA = +25°C, unless otherwise specified.) (Note 7)
Symbol Parameter Min Max Unit
VIN Supply Voltage 5.5 100 V TJ Operating Junction Temperature Range -40 +150 °C Note: 7. The device function is not guaranteed outside of the recommended operating conditions. AP6A255Q/AP6A355Q 4 of 18 May 2025 Document number: DS47149 Rev. 1 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(@ TA = +25°C, unless otherwise specified.) (Note 4)
Symbol Parameter Rating Unit
VIN Supply Voltage -0.3 to +110 V VSW Switch Node Voltage -1.0 to VIN +0.3 (DC) V VSW Switch Node Voltage -2.5 to VIN +5 (ns) V VBST Bootstrap Voltage VSW -0.3 to VSW +6.0 V VEN Enable/UVLO Voltage -0.3V to +6 V VFB Feedback Voltage -0.3V to +6.0 V TST Storage Temperature -65 to +150 °C TJ Junction Temperature +150 °C TL Lead Temperature +300 °C
ESD Susceptibility
(Note 5) HBM Human Body Model ±1000 V CDM Charged Device Model ±1500 V Notes: 4. Stresses greater than the 'Absolute Maximum Ratings' specified above can cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability can be affected by exposure to absolute maximum rating conditions for extended periods of time. 5. Semiconductor devices are ESD sensitive and can be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.
Package Thermal Information
(Note 6)
Symbol Parameter Rating Unit
θJA Junction to Ambient SO-8EP 39 °C/W θJC(TOP) Junction to Case (Top) SO-8EP 13 °C/W θJB Junction to Board (Bottom) SO-8EP 13 °C/W ψJT Junction to Top Characterization Parameter SO-8EP 4.5 °C/W ψJB Junction to Board Characterization Parameter SO-8EP 12.5 °C/W θJC(BOT) Junction to Case (Bottom) SO-8EP 3.5 °C/W Note: 6. Device mounted on FR-4 substrate, 1” sq. PC board, 2oz copper, with minimum recommended pad layout.
Recommended Operating Conditions
(@TA = +25°C, unless otherwise specified.) (Note 7)
Symbol Parameter Min Max Unit
VIN Supply Voltage 5.5 100 V TJ Operating Junction Temperature Range -40 +150 °C Note: 7. The device function is not guaranteed outside of the recommended operating conditions. AP6A255Q/AP6A355Q 4 of 18 May 2025 Document number: DS47149 Rev. 1 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.