Datasheet 2SC3134 (Kexin)

SMD Type Transistors
NPN Transistors 2SC3134 SOT-23 Unit: mm 2.9 +0.1 -0.1 0.4 +0.1 -0.1
3 ■ Features
0.4
● High VEBO.
+0.1 -0.1 +0.1 -0.1 2.4 1.3
● Wide ASO and high durability against breakdown. 1 2 ● Complementary to 2SA1252
0.55 0.95 +0.1 -0.1 0.1 +0.05 -0.01 1.9 +0.1 -0.1 +0.1 -0.1 1.Base 0.97 2.Emitter +0.1 -0.1 3.collector 0-0.1 0.38
■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 15 Collector Current - Continuous IC 150 mA Collector Current - Pulse ICP 300 Collector Power Dissipation PC 200 mW Junction Temperature TJ 125 ℃ Storage Temperature Range Tstg -55 to 125 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 50 V Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 15 Collector-base cut-off current ICBO VCB= 40 V , IE= 0 0.1 uA Emitter cut-off current IEBO VEB= 10V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB=5mA 0.5 V Base - emitter saturation voltage VBE(sat) IC=50 mA, IB=5mA 1.2 DC current gain hFE VCE= 6V, IC= 1mA 90 600 Collector output capacitance Cob VCB= 6V, f=1MHz 2.2 pF Transition frequency fT VCE= 6V, IC= 1mA 100 MHz ■ Classification of hfe Marking H4 H5 H6 H7 Range 90-180 135-270 200-400 300-600 www.kexin.com.cn 1