Datasheet FKPF12N60 (Fairchild) - 3
| Hersteller | Fairchild |
| Beschreibung | Bi-Directional Triode Thyristor Planar Silicon |
| Seiten / Seite | 7 / 3 — FKPF12N60 / FKPF12N80. Typical Curves. Figure 1. Maximum On-state … |
| Dateiformat / Größe | PDF / 144 Kb |
| Dokumentensprache | Englisch |
FKPF12N60 / FKPF12N80. Typical Curves. Figure 1. Maximum On-state Characteristics. Figure 2. Rated Surge On-state Current
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FKPF12N60 / FKPF12N80 Typical Curves
200 50 180 ] A 160 [ 40 ] NT A 140 T [ RE N E 120 30 R CUR R E Tj=25℃ 100 U T A Tj=125℃ T 80 S 20 TATE C 60 ON- -S N O 40 RGE 10 SU 20 0 0 1 10 100 0.0 0.5 1.0 1.5 2.0 CONDUCTION TIME ON-STATE VOLTAGE [V] (CYCLES AT 60Hz)
Figure 1. Maximum On-state Characteristics Figure 2. Rated Surge On-state Current
100 1000 ] [% T N E V =10V R GM R U P =5W [V] 10 GM C E R I , I FGTⅠ RGTⅠ E AG P =0.5W G(AV) G T I =2A GM L IG 100 V =1.5V R GT VO T E E T T A 1 A G G ED IFGTⅢ IZ L A M R I I , I V =0.2V RGTⅠ GD FGTⅠ RGTⅢ O 10 0.1 N 10 100 1000 10000 -60 -40 -20 0 20 40 60 80 100 120 140 GATE CURRENT [mA] JUNCTION TEMPERATURE [℃]
Figure 3. Gate Characteristics Figure 4. Gate Trigger Current vs Tj
1000 ] 10 [% E JUNCTION TO CASE AG E T C L AN VO R PED E M I G W] C/ IG o 100 MAL R ) [ 1 ER T H (j-c E h T T T Rt A G EN D SI E AN IZ R T AL M R O 10 N -60 -40 -20 0 20 40 60 80 100 120 140 0.1 1E-3 0.01 0.1 1 10 100 JUNCTION TEMPERATURE [℃] TIME [s]
Figure 5. Gate Trigger Voltage vs Tj Figure 6. Transient Thermal Impedance
©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002
200 50 180 ] A 160 [ 40 ] NT A 140 T [ RE N E 120 30 R CUR R E Tj=25℃ 100 U T A Tj=125℃ T 80 S 20 TATE C 60 ON- -S N O 40 RGE 10 SU 20 0 0 1 10 100 0.0 0.5 1.0 1.5 2.0 CONDUCTION TIME ON-STATE VOLTAGE [V] (CYCLES AT 60Hz)
Figure 1. Maximum On-state Characteristics Figure 2. Rated Surge On-state Current
100 1000 ] [% T N E V =10V R GM R U P =5W [V] 10 GM C E R I , I FGTⅠ RGTⅠ E AG P =0.5W G(AV) G T I =2A GM L IG 100 V =1.5V R GT VO T E E T T A 1 A G G ED IFGTⅢ IZ L A M R I I , I V =0.2V RGTⅠ GD FGTⅠ RGTⅢ O 10 0.1 N 10 100 1000 10000 -60 -40 -20 0 20 40 60 80 100 120 140 GATE CURRENT [mA] JUNCTION TEMPERATURE [℃]
Figure 3. Gate Characteristics Figure 4. Gate Trigger Current vs Tj
1000 ] 10 [% E JUNCTION TO CASE AG E T C L AN VO R PED E M I G W] C/ IG o 100 MAL R ) [ 1 ER T H (j-c E h T T T Rt A G EN D SI E AN IZ R T AL M R O 10 N -60 -40 -20 0 20 40 60 80 100 120 140 0.1 1E-3 0.01 0.1 1 10 100 JUNCTION TEMPERATURE [℃] TIME [s]
Figure 5. Gate Trigger Voltage vs Tj Figure 6. Transient Thermal Impedance
©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002