Datasheet FOD410 (ON Semiconductor) - 4

link to page 4
FOD410, FOD4108, FOD4116, FOD4118 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified)
Symbol Parameter Test Conditions Device Min Typ Max Unit INDIVIDUAL COMPONENT CHARACTERISTICS Emitter
VF Input Forward Voltage IF = 20 mA All − 1.25 1.50 V IR Reverse Leakage Current VR = 6 V All − 0.0001 10 mA
Detector
ID(RMS) Peak Blocking Current IF = 0, VD = 600 V FOD410, − 3 100 mA Either Direction TA = 100°C FOD4116 (Note 2) VD = 800 V FOD4108, FOD4118 IR(RMS) Reverse Current TA = 100 °C VD = 600 V FOD410, − 3 100 mA FOD4116 VD = 800 V FOD4108, FOD4118 dv/dt Critical Rate of Rise of IF = 0 A (Note 3) VD = VDRM All 10,000 − − V/ms Off−State Voltage
TRANSFER CHARACTERISTICS
IFT LED Trigger Current Main Terminal Voltage = 5 V (Note 4) FOD410, − 0.65 2.0 mA FOD4108 FOD4116, − 0.65 1.3 FOD4118 VTM Peak On−State Voltage, ITM = 300 mA peak, IF = Rated IFT All − 2.2 3 V Either Direction IH Holding Current, Either VT = 3 V All − 200 500 mA Direction IL Latching Current VT = 2.2 V All − 5 − mA tON Turn−On Time PF = 1.0, VRM = VDM = 424 VAC FOD410, − 60 − ms IT = 300 mA FOD4116, FOD4118 VRM = VDM = 565 VAC FOD4108 tOFF Turn−Off Time VRM = VDM = 424 VAC FOD410, − 52 − ms FOD4116, FOD4118 VRM = VDM = 565 VAC FOD4108 dv/dtC Critical Rate of Rise of VD = 230 VRMS, ID = 300 mAPK All − 10 − V/ms Voltage at Current Commutation di/dtC Critical Rate of Rise of VD = 230 VRMS, ID = 300 mAPK All − 9 − A/ms On−State Current Commutation dv(IO)/dt Critical Rate of Rise of IT = 0 A, VRM = VDM = 424 VAC All 10,000 − − V/ms Coupled Input / Output Voltage 2. Test voltage must be applied within dv/dt rating. 3. This is static dv/dt. Commutating dv/dt is a function of the load−driving thyristor(s) only. 4. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT (2 mA for FOD410 and FOD4108 and 1.3 mA for FOD4116 and FOD4118) and the absolute max IF (30 mA).
www.onsemi.com 4