Datasheet CLP24H4S30P (Ampleon) - 6

HerstellerAmpleon
BeschreibungRF power GaN-SiC HEMT
Seiten / Seite11 / 6 — CLP24H4S30P. RF power GaN-SiC HEMT. 8. Package. outline. Fig 6. Package …
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DokumentenspracheEnglisch

CLP24H4S30P. RF power GaN-SiC HEMT. 8. Package. outline. Fig 6. Package outline DFN-7x6.5-6-1 (sheet 1 of 2). Product data sheet

CLP24H4S30P RF power GaN-SiC HEMT 8 Package outline Fig 6 Package outline DFN-7x6.5-6-1 (sheet 1 of 2) Product data sheet

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CLP24H4S30P RF power GaN-SiC HEMT 8. Package outline
DFN-7x6.5-6-1 C 7.00 A B Terminal 1 H 0.10 C F 0.10 index area 0 5.6 A 0.70 MIN 3.60 1.00 0.10O A B C L 0.10O C DETAIL A SCALE 30 : 1 3 4 3 1 0 0 3 8. 0 . 0 2 2. 5 2 5 . 3 0 5 8.0 1 6 0 6.1 0 5 0 0 . 0 0 + -5 Terminal 1 Ground Plane (1) 0.0 index area 0 Package outline drawing: Tolerances unless otherwise stated: Revision: Dimension: B 0.10 Angle: B 1° Revision date: 05/29/2020 units in mm. DFN-7x6.5-6-1 Third angle projection Sheet 1 of 2 Publication
Fig 6. Package outline DFN-7x6.5-6-1 (sheet 1 of 2)
CLP24H4S30P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2024. All rights reserved.
Product data sheet Rev. 1 — 23 July 2024 6 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 2.1 Pinning 2.2 Pin description 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Test circuit 7.2 Graphical data 7.3 Impedance information 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents