Datasheet RV2C010UN (Rohm) - 2
| Hersteller | Rohm |
| Beschreibung | 20V 1A Nch Power MOSFET |
| Seiten / Seite | 13 / 2 — RV2C010UN. Thermal resistance. Electrical characteristics (Ta = 25°C). … |
| Dateiformat / Größe | PDF / 1.5 Mb |
| Dokumentensprache | Englisch |
RV2C010UN. Thermal resistance. Electrical characteristics (Ta = 25°C). 20160905 - Rev.004
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RV2C010UN
Datasheet l
Thermal resistance
Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - ambient R *2 thJA - - 312.5 ℃/W l
Electrical characteristics (Ta = 25°C)
Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V voltage (BR)DSS VGS = 0V, ID = 1mA 20 - - V Breakdown voltage ΔV (BR)DSS ID = 1mA - 29 - mV/℃ temperature coefficient ΔTj referenced to 25℃ Zero gate voltage I drain current DSS VDS = 20V, VGS = 0V - - 1 μA Gate - Source leakage current IGSS VGS = ±8V, VDS = 0V - - ±10 μA Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 0.3 - 1.0 V Gate threshold voltage ΔV GS(th) ID = 1mA - -1.6 - mV/℃ temperature coefficient ΔTj referenced to 25℃ VGS = 4.5V, ID = 500mA - 340 470 VGS = 2.5V, ID = 500mA - 400 560 Static drain - source R *3 V mΩ on - state resistance DS(on) GS = 1.8V, ID = 250mA - 470 650 VGS = 1.5V, ID = 100mA - 540 810 VGS = 1.2V, ID = 50mA - 700 1050 Forward Transfer |Y Admittance fs|*3 VDS = 10V, ID = 100mA 400 - - mS *1 Pw≦10μs , Duty cycle≦1% *2 EACH TERMINAL MOUNTED ON A REFFERENCE LAND、Pw≦1s *3 Pulsed www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/11
20160905 - Rev.004
Datasheet l
Thermal resistance
Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - ambient R *2 thJA - - 312.5 ℃/W l
Electrical characteristics (Ta = 25°C)
Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V voltage (BR)DSS VGS = 0V, ID = 1mA 20 - - V Breakdown voltage ΔV (BR)DSS ID = 1mA - 29 - mV/℃ temperature coefficient ΔTj referenced to 25℃ Zero gate voltage I drain current DSS VDS = 20V, VGS = 0V - - 1 μA Gate - Source leakage current IGSS VGS = ±8V, VDS = 0V - - ±10 μA Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 0.3 - 1.0 V Gate threshold voltage ΔV GS(th) ID = 1mA - -1.6 - mV/℃ temperature coefficient ΔTj referenced to 25℃ VGS = 4.5V, ID = 500mA - 340 470 VGS = 2.5V, ID = 500mA - 400 560 Static drain - source R *3 V mΩ on - state resistance DS(on) GS = 1.8V, ID = 250mA - 470 650 VGS = 1.5V, ID = 100mA - 540 810 VGS = 1.2V, ID = 50mA - 700 1050 Forward Transfer |Y Admittance fs|*3 VDS = 10V, ID = 100mA 400 - - mS *1 Pw≦10μs , Duty cycle≦1% *2 EACH TERMINAL MOUNTED ON A REFFERENCE LAND、Pw≦1s *3 Pulsed www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/11
20160905 - Rev.004