Datasheet IGB03N120H2 (Infineon) - 7

IGB03N120H2 1.0mJ 1 1 ) E ) E on and Ets include losses on and Ets include losses 0.7mJ E 1 due to diode recovery. due to diode recovery. E 1 ts ts ES ES 0.6mJ SS SS LO LO Y Y G G 0.5mJ E ER off 0.5mJ ER EN EN G G 0.4mJ IN IN H H ITC E 1 ITC 0.3mJ on Eoff , SW , SW E E 1 0.2mJ Eon 0.0mJ 0A 2A 4A 0Ω 50Ω 100Ω 150Ω 200Ω 250Ω IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses as a function of collector current as a function of gate resistor
(inductive load, Tj = 150°C, (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 82Ω, VCE = 800V, VGE = +15V/0V, IC = 3A, dynamic test circuit in Fig.E ) dynamic test circuit in Fig.E ) 0.5mJ 1) Eon and Ets include losses SS E 1 I =3A, T =150°C ts 0.16mJ C J due to diode recovery. LO Y ES 0.4mJ SS 0.12mJ LO Y ENERG G G 0.3mJ ER I =3A, T =25°C C J 0.08mJ EN E CHIN G off I =1A, T =150°C IN C J 1 H 0.2mJ Eon SWIT ITC 0.04mJ , SW OFF I =1A, T =25°C E C J 0.1mJ URN , T 0.00mJ 0V/us 1000V/us 2000V/us 3000V/us 25°C 80°C 125°C 150°C E off Tj, JUNCTION TEMPERATURE dv/dt, VOLTAGE SLOPE
Figure 15. Typical switching energy losses Figure 16. Typical turn off switching energy as a function of junction temperature loss for soft switching
(inductive load, VCE = 800V, (dynamic test circuit in Fig. E) VGE = +15V/0V, IC = 3A, RG = 82Ω, dynamic test circuit in Fig.E ) Power Semiconductors 7 Rev. 2.4 Oct. 07