Datasheet IGB03N120H2 (Infineon) - 2
| Hersteller | Infineon |
| Beschreibung | HighSpeed 2-Technology for 1200V in PG-TO263-3-2 Package |
| Seiten / Seite | 12 / 2 — Thermal Resistance. Parameter Symbol. Conditions. Max. Value. Unit. … |
| Dateiformat / Größe | PDF / 1.2 Mb |
| Dokumentensprache | Englisch |
Thermal Resistance. Parameter Symbol. Conditions. Max. Value. Unit. Characteristic. Electrical Characteristic,. min. Typ. max
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Textversion des Dokuments
IGB03N120H2
Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic
IGBT thermal resistance, RthJC 2.0 K/W junction – case Thermal resistance, RthJA 40 junction – ambient1)
Electrical Characteristic,
at Tj = 25 °C, unless otherwise specified
Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=300µA 1200 - - V Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=3A Tj=25°C - 2.2 2.8 T - 2.5 - j = 150 ° C V G E = 1 0 V, I C =3A , Tj=25°C - 2.4 - Gate-emitter threshold voltage VGE(th) IC=90µA,VCE=VGE 2.1 3 3.9 Zero gate voltage collector current ICES VCE=1200V,VGE=0V µA Tj=25°C - - 20 T - - 80 j = 150 ° C Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V, IC=3A - 2 - S
Dynamic Characteristic
Input capacitance Ciss VCE=25V, - 205 - pF Output capacitance Coss VGE=0V, - 24 - Reverse transfer capacitance C f=1MHz r s s - 7 - Gate charge QGate VCC=960V, IC=3A - 22 - nC VGE=15V Internal emitter inductance LE - 7 - nH measured 5mm (0.197 in.) from case 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. Power Semiconductors 2 Rev. 2.4 Oct. 07
Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic
IGBT thermal resistance, RthJC 2.0 K/W junction – case Thermal resistance, RthJA 40 junction – ambient1)
Electrical Characteristic,
at Tj = 25 °C, unless otherwise specified
Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=300µA 1200 - - V Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=3A Tj=25°C - 2.2 2.8 T - 2.5 - j = 150 ° C V G E = 1 0 V, I C =3A , Tj=25°C - 2.4 - Gate-emitter threshold voltage VGE(th) IC=90µA,VCE=VGE 2.1 3 3.9 Zero gate voltage collector current ICES VCE=1200V,VGE=0V µA Tj=25°C - - 20 T - - 80 j = 150 ° C Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V, IC=3A - 2 - S
Dynamic Characteristic
Input capacitance Ciss VCE=25V, - 205 - pF Output capacitance Coss VGE=0V, - 24 - Reverse transfer capacitance C f=1MHz r s s - 7 - Gate charge QGate VCC=960V, IC=3A - 22 - nC VGE=15V Internal emitter inductance LE - 7 - nH measured 5mm (0.197 in.) from case 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. Power Semiconductors 2 Rev. 2.4 Oct. 07