Datasheet VIA0050DD (Vishay) - 5

VIA0050DD
www.vishay.com Vishay Semiconductors
THERMAL INFORMATION PARAMETER SYMBOL VALUE UNIT
Junction to ambient thermal resistance RθJA 86 °C/W Junction to case (top) thermal resistance RθJC(top) 28 °C/W Junction to board thermal resistance RθJB 42 °C/W Junction to top characterization parameter ΨJT 4 °C/W Junction to board characterization parameter ΨJB 42 °C/W
TYPICAL CHARACTERISTICS
(VDD1 = 5 V, VDD2 = 3.3 V, VIN = -50 mV to +50 mV) Axis Title Axis Title 1.20 10000 -100 10000 B) d ( tage 1.15 n Ratio -105 1000 1000 Overvol (V) jectio ne ne ode Re ne ne ine 1.10 e -110 1st li od 2nd li on-M 1st li 2nd li 2nd l -M m n 100 o 100 Detection Level m 1.05 -115 - Com vo Com CMV RR - 1.00 10 -120 10 CM -40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120 T - Ambient Temperature (°C) T - Ambient Temperature (°C) amb amb Fig. 3 - Common-Mode Overvoltage Detection Level vs. Fig. 5 - Common-Mode Rejection Ratio vs. Ambient Temperature Ambient Temperature Axis Title Axis Title 16 10000 -22.0 10000 ) V ) µ 12 (µA 1000 -22.4 1000 ltage ( o rrent u ne ne ne ine C 8 1st line 2nd line ias 1st li 2nd li 2nd li Offset V 2nd l B 100 put -22.8 100 put n In 4 - - I I IB OSV 0 10 -23.2 10 -40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120 T - Ambient Temperature (°C) T - Ambient Temperature (°C) amb amb Fig. 4 - Input Offset Voltage vs. Ambient Temperature Fig. 6 - Input Bias Current vs. Ambient Temperature Rev. 1.2, 02-Apr-2025
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