Datasheet AOD5B60D (Alpha & Omega) - 2

AOD5B60D Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS
BV I CES Collector-Emitter Breakdown Voltage C=1mA, VGE=0V, TJ=25° C 600 - - V TJ=25°C - 1.55 1.8 V CE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=5A T V J=125° C - 1.78 - TJ=150°C - 1.85 - TJ=25°C - 1.46 1.75 V F Diode Forward Voltage VGE=0V, IC=5A T V J=125° C - 1.36 - TJ=150°C - 1.3 - V V GE(th) Gate-Emitter Threshold Voltage CE=VGE, IC=1mA - 6 - V TJ=25°C - - 10 I VCE=600V, VGE=0V m CES Zero Gate Voltage Collector Current TJ=125°C - - 100 A TJ=150°C - - 500 I V GES Gate-Emitter Leakage Current CE=0V, VGE=±20V - - ±100 nA g Forward Transconductance V FS CE=20V, IC=5A - 2.3 - S
DYNAMIC PARAMETERS
C ies Input Capacitance - 367 - pF C V oes Output Capacitance GE=0V, VCE=25V, f=1MHz - 34 - pF C res Reverse Transfer Capacitance - 1.47 - pF Q g Total Gate Charge - 9.4 - nC Q ge Gate to Emitter Charge VGE=15V, VCE=480V, IC=5A - 3.15 - nC Q gc Gate to Collector Charge - 3.6 - nC Short circuit collector current, Max. I 1000 short circuits, Delay between V C(SC) GE=15V, VCE=400V, RG=60W - 21 - A short circuits ≥ 1.0s R g Gate Resistance VGE=0V, VCE=0V, f=1MHz - 3 - W
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
t D(on) Turn-On Delay Time - 12 - ns t r Turn-On Rise Time - 15 - ns TJ=25°C t D(off) Turn-Off Delay Time V - 82 - ns GE=15V, VCE=400V, IC=5A, t f Turn-Off Fall Time RG=60W, - 10 - ns E Turn-On Energy Parasitic Inductance=75nH on - 0.14 - mJ E off Turn-Off Energy - 0.04 - mJ E total Total Switching Energy - 0.18 - mJ t rr Diode Reverse Recovery Time - 98 - ns TJ=25°C Q rr Diode Reverse Recovery Charge - 0.23 - mC IF=5A,dI/dt=200A/ms,VCE=400V I rm Diode Peak Reverse Recovery Current - 4.4 - A
SWITCHING PARAMETERS, (Load Inductive, TJ=150°C)
t D(on) Turn-On DelayTime - 11 - ns t r Turn-On Rise Time - 16 - ns T t J=150° C D(off) Turn-Off Delay Time - 110 - ns VGE=15V, VCE=400V, IC=5A, t f Turn-Off Fall Time - 14 - ns RG=60W, E on Turn-On Energy - 0.18 - mJ Parasitic Inductance=75nH E off Turn-Off Energy - 0.08 - mJ E total Total Switching Energy - 0.26 - mJ t rr Diode Reverse Recovery Time - 166 - ns TJ=150°C Q rr Diode Reverse Recovery Charge - 0.4 - mC IF=5A,dI/dt=200A/ms,VCE=400V I rm Diode Peak Reverse Recovery Current - 5.2 - A APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS. AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale Rev.4.1: November 2023
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