Datasheet MCC, MCD, MDC (IXYS) - 2

IXYS Thyristor/Diode Module Types M##501-12io2 to M##501-18io2 Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS 1) UNITS VTM Maximum peak on-state voltage -1.50 ITM = 1700 A V VTM Maximum peak on-state voltage -1.43 ITM = 1500 A V VT0 Threshold voltage -0.85 V rT Slope resistance -0.30 mΩ 1000 -(dv/dt)cr Critical rate of rise of off-state voltage VD = 80% VDRM, linear ramp, Gate o/c V/µs IDRM Peak off-state current -70 Rated VDRM mA IRRM Peak reverse current -70 Rated VRRM mA VGT Gate trigger voltage -2.5 IGT Gate trigger current -250 VGD Gate non-trigger voltage 0.25 -IL Latching current -1000 VD = 12 V, Tvj = 25°C mA IH Holding current -300 VD = 12 V, Tvj = 25°C mA tgd Gate controlled turn-on delay time -2.0 Turn-on time -8.0 IFG = 2 A, tr = 1 µs, VD = 40%VDRM,
ITM = 1500 A, di/dt = 10 A/µs, Tvj = 25°C µs tgt
Qrr Recovered Charge -1350 1550 Qra Recovered Charge, 50% chord -1150 -Irm Reverse recovery current -120 -trr Reverse recovery time, 50% chord -19 -tq Turn-off time -200 RthJC Thermal resistance, junction to case -0.062 Single Thyristor K/W -0.031 Whole Module K/W RthCH Thermal resistance, case to heatsink -0.02 Single Thyristor K/W -0.01 Whole Module K/W F1 Mounting force (to heatsink) 4.25 -5.75 F2 Mounting force (to terminals) Wt Weight 10.2 -13.8 -1.5 -V Tvj = 25°C, VD = 12 V, IT = 3 A mA 67% VDRM V µC
µC ITM = 1000 A, tp = 1 ms, di/dt = 10A/µs,
VR = 100 V A
µs ITM = 1500 A, tp = 1 ms, di/dt = 10 A/µs,
VR = 100 V, VDR = 67%VDRM, dvDR/dt = 50 V/µs µs Nm
2) Nm
kg Notes:
1) Unless otherwise indicated Tvj=125°C.
2) Screws must be lubricated. Rating Report. Types M##501-12io2 and M##501-18io2 Issue 2 Page 2 of 10 August, 2011