Datasheet TLP5814H (Toshiba)

TLP5814H Photocouplers GaAℓAs Infrared LED & Photo IC TLP5814H 1. Applications • Photovoltaic (PV) inverters • Industrial Inverters • SiC-MOSFET Gate Drivers • IGBT Gate Drivers 2. General The TLP5814H is a highly integrated gate driver photocoupler housed in a 8-pin SO8L package with a long creepage and clearance of 8 mm. This gate driver photocoupler provides a maximum peak output current of +6.8 / -4.8 A with rail to rail output, and this enables stable operation and better switching performance in system. The built-in active Miller clamp function contributes to avoid a self-turn-on phenomenon of Power devices, making TLP5814H suitable for driving SiC-MOSFETs and IGBTs. The TLP5814H consists of an infrared LED and an integrated high-gain, high-speed photodetector. An internal faraday shield provides a guaranteed common-mode transient immunity of ±70 kV/µs (min). 3. Features (1) Output peak current: +6.8 A / -4.8 A (max) (2) Peak Miller clamp sinking current: 6.8 A (max) (3) Operating temperature: -40 to 125 � (4) Supply current: 5 mA (max) (5) Supply voltage: 13 to 23 V (6) Threshold input current: 3 mA (max) (7) Propagation delay time: 150 ns (max) (8) Common-mode transient immunity: ±70 kV/µs (min) (9) Isolation voltage: 5000 Vrms (min) (10) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN IEC 60747-5-5, EN IEC 62368-1 (Note 1) CQC-approved: GB4943.1 Japan Factory Note 1: When a VDE approved type is needed, please designate the Option (D4). Start of commercial production 2024-11 ©2023-2025 1 2025-02-03 Toshiba Electronic Devices & Storage Corporation Rev.4.0