Datasheet NV6287 (Navitas Semiconductor) - 10
| Hersteller | Navitas Semiconductor |
| Beschreibung | GaNSense Motor Drive IC in half-bridge configuration |
| Seiten / Seite | 34 / 10 — NV6287. 7.8. Electrical Characteristics (4, cont.). Covered part numbers: … |
| Dateiformat / Größe | PDF / 2.3 Mb |
| Dokumentensprache | Englisch |
NV6287. 7.8. Electrical Characteristics (4, cont.). Covered part numbers: NV6287-01, NV6287-02, NV6287-03, NV6287-04. SYMBOL
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NV6287 7.8. Electrical Characteristics (4, cont.)
Typical conditions: V =400V, V =15V, F =1MHz, T =25ºC, I =3.5A (unless otherwise specified) DS CC SW AMB D
Covered part numbers: NV6287-01, NV6287-02, NV6287-03, NV6287-04
(See Table 1)
SYMBOL PARAMETER MIN TYP MAX UNITS CONDITIONS Low side GaN FET Characteristics
IDSS Drain-Source Leakage Current 0.75 25 µA VDS = 650 V, VINL = 0 V IDSS Drain-Source Leakage Current, TC =150 ºC 7 µA VDS =650V, VINL =0V, TC =150 ºC R Low-side FET Drain-Source Resistance 170 238 mΩ V = 5 V, I = 3.5 A DS(ON) INL D V Source-Drain Reverse Voltage 3.3 V V = 0 V, V = 0 V, I = 3.5 A SD INL INH SD Q Output Charge 17.8 nC V = 400 V, V = 0V, V = 0 V OSS DS INL INH Q Reverse Recovery Charge 0 nC V = 400 V RR DS C Output Capacitance 26 pF V = 400 V, V = 0 V, V = 0 V OSS DS INL INH (1) Effective Output Capacitance, Energy C 32.1 pF V = 400 V, V = 0 V, V = 0 V O(er) Related DS INL INH (2) C Effective Output Capacitance, Time Related 44.7 pF V = 400 V, V = 0 V, V = 0 V O(tr) DS INL INH
High side GaN FET Characteristics
IDSS Drain-Source Leakage Current 0.1 25 µA VDS = 650 V, VINL = 0 V IDSS Drain-Source Leakage Current, TC =150 ºC 7 µA VDS =650V, VINL =0V, TC =150 ºC R High-side FET Drain-Source Resistance 170 238 mΩ V = 5 V, I = 3.5 A DS(ON) INL D V Source-Drain Reverse Voltage 3.4 V V = 0 V, V = 0 V, I = 3.5 A SD INL INH SD Q Output Charge 15.8 nC V = 400 V, V = 0V, V = 0 V OSS DS INL INH Q Reverse Recovery Charge 0 nC V = 400 V RR DS C Output Capacitance 19 pF V = 400 V, V = 0 V, V = 0 V OSS DS INL INH (1) Effective Output Capacitance, Energy C 28.5 pF V = 400 V, V = 0 V, V = 0 V O(er) Related DS INL INH (2) C Effective Output Capacitance, Time Related 39.6 pF V = 400 V, V = 0 V, V = 0 V O(tr) DS INL INH (1) C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 400 V O(er) OSS DS (2) C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 400 V O(tr) OSS DS
Final Datasheet 10 Rev Apr. 29, 2025
NV6287 7.8. Electrical Characteristics (4, cont.)
Typical conditions: V =400V, V =15V, F =1MHz, T =25ºC, I =3.5A (unless otherwise specified) DS CC SW AMB D
Covered part numbers: NV6287-01, NV6287-02, NV6287-03, NV6287-04
(See Table 1)
SYMBOL PARAMETER MIN TYP MAX UNITS CONDITIONS Low side GaN FET Characteristics
IDSS Drain-Source Leakage Current 0.75 25 µA VDS = 650 V, VINL = 0 V IDSS Drain-Source Leakage Current, TC =150 ºC 7 µA VDS =650V, VINL =0V, TC =150 ºC R Low-side FET Drain-Source Resistance 170 238 mΩ V = 5 V, I = 3.5 A DS(ON) INL D V Source-Drain Reverse Voltage 3.3 V V = 0 V, V = 0 V, I = 3.5 A SD INL INH SD Q Output Charge 17.8 nC V = 400 V, V = 0V, V = 0 V OSS DS INL INH Q Reverse Recovery Charge 0 nC V = 400 V RR DS C Output Capacitance 26 pF V = 400 V, V = 0 V, V = 0 V OSS DS INL INH (1) Effective Output Capacitance, Energy C 32.1 pF V = 400 V, V = 0 V, V = 0 V O(er) Related DS INL INH (2) C Effective Output Capacitance, Time Related 44.7 pF V = 400 V, V = 0 V, V = 0 V O(tr) DS INL INH
High side GaN FET Characteristics
IDSS Drain-Source Leakage Current 0.1 25 µA VDS = 650 V, VINL = 0 V IDSS Drain-Source Leakage Current, TC =150 ºC 7 µA VDS =650V, VINL =0V, TC =150 ºC R High-side FET Drain-Source Resistance 170 238 mΩ V = 5 V, I = 3.5 A DS(ON) INL D V Source-Drain Reverse Voltage 3.4 V V = 0 V, V = 0 V, I = 3.5 A SD INL INH SD Q Output Charge 15.8 nC V = 400 V, V = 0V, V = 0 V OSS DS INL INH Q Reverse Recovery Charge 0 nC V = 400 V RR DS C Output Capacitance 19 pF V = 400 V, V = 0 V, V = 0 V OSS DS INL INH (1) Effective Output Capacitance, Energy C 28.5 pF V = 400 V, V = 0 V, V = 0 V O(er) Related DS INL INH (2) C Effective Output Capacitance, Time Related 39.6 pF V = 400 V, V = 0 V, V = 0 V O(tr) DS INL INH (1) C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 400 V O(er) OSS DS (2) C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 400 V O(tr) OSS DS
Final Datasheet 10 Rev Apr. 29, 2025