Datasheet VS-26MT (Vishay) - 2
| Hersteller | Vishay |
| Beschreibung | Three Phase Bridge Rectifier, 25 A to 35 A |
| Seiten / Seite | 7 / 2 — VS-26MT.., VS-36MT.. Series. FORWARD CONDUCTION. VALUES. PARAMETER … |
| Dateiformat / Größe | PDF / 178 Kb |
| Dokumentensprache | Englisch |
VS-26MT.., VS-36MT.. Series. FORWARD CONDUCTION. VALUES. PARAMETER SYMBOL. TEST. CONDITIONS. UNITS. 26MT.. 36MT.
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Textversion des Dokuments
VS-26MT.., VS-36MT.. Series
www.vishay.com Vishay Semiconductors
FORWARD CONDUCTION VALUES VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS 26MT.. 36MT..
25 35 A Maximum DC output current at TC IO 120° rect. conduction angle 70 60 °C t = 10 ms No voltage 360 475 Maximum peak, one-cycle t = 8.3 ms reapplied 375 500 I A non-repetitive forward current FSM t = 10 ms 100 % V 300 400 RRM reapplied t = 8.3 ms Initial 314 420 T t = 10 ms No voltage J = TJ maximum 635 1130 t = 8.3 ms reapplied 580 1030 Maximum I2t for fusing I2t A2s t = 10 ms 100 % V 450 800 RRM reapplied t = 8.3 ms 410 730 Maximum I2t for fusing I2t I2t for time tx = I2t x tx; 0.1 tx 10 ms, VRRM = 0 V 6360 11 300 A2s Low level of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum 0.88 0.86 V High level of threshold voltage VF(TO)2 (I > x IF(AV)), TJ maximum 1.13 1.03 Low level forward slope resistance rt1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum 7.9 6.3 m High level forward slope resistance rt2 (I > x IF(AV)), TJ maximum 5.2 5.0 Maximum forward voltage drop VFM TJ = 25 °C, IFM = 40 Apk - per single junction 1.26 1.19 V Maximum DC reverse current IRRM TJ = 25 °C, per junction at rated VRRM 100 µA RMS isolation voltage VINS TJ = 25 °C, all terminal shorted; f = 50 Hz, t = 1 s 2700 V
THERMAL - MECHANICAL SPECIFICATIONS VALUES VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS 26MT 36MT
Maximum junction and storage T temperature range J, TStg -55 to +150 °C Maximum thermal resistance, DC operation per bridge R 1.42 1.35 junction to case thJC (based on total power loss of bridge) K/W Maximum thermal resistance, R case to heatsink thCS Mounting surface, smooth, flat and greased 0.2 0.2 Approximate weight 20 g Mounting torque ± 10 % Bridge to heatsink with screw M4 2.0 Nm 160 1000 26MT.. Series 140 26MT.. Series
le (°C) wab
100 120
m Allo u mperature
Per junction
e
100 10 + T = 25 °C
Maxim
120° (rect.) J
Case T
80 ~ T = 150 °C J - 60
Instantaneous Forward Current (A)
1 0 5 10 15 20 25 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Total Output Current (A) Instantaneous Forward Voltage (V)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Forward Voltage Drop Characteristics Revision: 15-Jan-2019
2
Document Number: 93565 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
FORWARD CONDUCTION VALUES VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS 26MT.. 36MT..
25 35 A Maximum DC output current at TC IO 120° rect. conduction angle 70 60 °C t = 10 ms No voltage 360 475 Maximum peak, one-cycle t = 8.3 ms reapplied 375 500 I A non-repetitive forward current FSM t = 10 ms 100 % V 300 400 RRM reapplied t = 8.3 ms Initial 314 420 T t = 10 ms No voltage J = TJ maximum 635 1130 t = 8.3 ms reapplied 580 1030 Maximum I2t for fusing I2t A2s t = 10 ms 100 % V 450 800 RRM reapplied t = 8.3 ms 410 730 Maximum I2t for fusing I2t I2t for time tx = I2t x tx; 0.1 tx 10 ms, VRRM = 0 V 6360 11 300 A2s Low level of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum 0.88 0.86 V High level of threshold voltage VF(TO)2 (I > x IF(AV)), TJ maximum 1.13 1.03 Low level forward slope resistance rt1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum 7.9 6.3 m High level forward slope resistance rt2 (I > x IF(AV)), TJ maximum 5.2 5.0 Maximum forward voltage drop VFM TJ = 25 °C, IFM = 40 Apk - per single junction 1.26 1.19 V Maximum DC reverse current IRRM TJ = 25 °C, per junction at rated VRRM 100 µA RMS isolation voltage VINS TJ = 25 °C, all terminal shorted; f = 50 Hz, t = 1 s 2700 V
THERMAL - MECHANICAL SPECIFICATIONS VALUES VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS 26MT 36MT
Maximum junction and storage T temperature range J, TStg -55 to +150 °C Maximum thermal resistance, DC operation per bridge R 1.42 1.35 junction to case thJC (based on total power loss of bridge) K/W Maximum thermal resistance, R case to heatsink thCS Mounting surface, smooth, flat and greased 0.2 0.2 Approximate weight 20 g Mounting torque ± 10 % Bridge to heatsink with screw M4 2.0 Nm 160 1000 26MT.. Series 140 26MT.. Series
le (°C) wab
100 120
m Allo u mperature
Per junction
e
100 10 + T = 25 °C
Maxim
120° (rect.) J
Case T
80 ~ T = 150 °C J - 60
Instantaneous Forward Current (A)
1 0 5 10 15 20 25 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Total Output Current (A) Instantaneous Forward Voltage (V)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Forward Voltage Drop Characteristics Revision: 15-Jan-2019
2
Document Number: 93565 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000