Datasheet BSS308PE (Infineon) - 7
| Hersteller | Infineon |
| Beschreibung | OptiMOS P3 Small-Signal-Transistor |
| Seiten / Seite | 9 / 7 — BSS308PE. 13 Avalanche characteristics. 14 Typ. gate charge. 101. [A]. … |
| Revision | 02_03 |
| Dateiformat / Größe | PDF / 246 Kb |
| Dokumentensprache | Englisch |
BSS308PE. 13 Avalanche characteristics. 14 Typ. gate charge. 101. [A]. 100. 10-1. 103. 102. [µs]. gate [nC]
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Textversion des Dokuments
BSS308PE 13 Avalanche characteristics 14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-2 A pulsed parameter: T j(start) parameter: V DD
101 10 8
15 V 25 °C
6 ]
6 V
[A] 100
100 °C
[V GS I AV
24 V
V 4
125 °C
2 10-1 0 103 102 101 100 0 1 2 3 4 5 6 t Q AV [µs] gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
33 V
GS Q g
32 31 [V] )S 30 BR(DSV
V gs(th)
29 28
Q g(th) Q sw
Q gate
Q
27
g s Q gd
-60 -20 20 60 100 140 T j [°C]
Rev 2.03 page 7 2011-07-08
I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-2 A pulsed parameter: T j(start) parameter: V DD
101 10 8
15 V 25 °C
6 ]
6 V
[A] 100
100 °C
[V GS I AV
24 V
V 4
125 °C
2 10-1 0 103 102 101 100 0 1 2 3 4 5 6 t Q AV [µs] gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
33 V
GS Q g
32 31 [V] )S 30 BR(DSV
V gs(th)
29 28
Q g(th) Q sw
Q gate
Q
27
g s Q gd
-60 -20 20 60 100 140 T j [°C]
Rev 2.03 page 7 2011-07-08