Datasheet CMS03 (Toshiba)

HerstellerToshiba
BeschreibungSwitching Mode Power Supply Applications Portable Equipment Battery Applications
Seiten / Seite5 / 1 — CMS03. Absolute Maximum Ratings (Ta. 25°C). Electrical Characteristics (Ta
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DokumentenspracheEnglisch

CMS03. Absolute Maximum Ratings (Ta. 25°C). Electrical Characteristics (Ta

Datasheet CMS03 Toshiba

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CMS03 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CMS03
Switching Mode Power Supply Applications Unit: mm Portable Equipment Battery Applications • Repetitive peak reverse voltage : VRRM = 30 V • Average forward current : IF (AV) = 3 A • Peak forward voltage : VFM = 0.45 V (max) • Suitable for compact assembly due to small surface-mount package “M−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta
=
25°C)
Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 30 V Average forward current IF (AV) 3 (Note 1) A Non-repetitive peak forward surge current IFSM 40 (50 Hz) A Junction temperature T j −40 to 150 °C Storage temperature Tstg −40 to 150 °C Note 1: Tℓ = 117.6°C Rectangular waveform (α = 180°), VR = 15 V Ta = 28.4°C Device mounted on a ceramic board JEDEC ― Board size : 50 mm × 50 mm Soldering land size : 2 mm × 2 mm JEITA ― Board thickness : 0.64 mm TOSHIBA 3-4E1A Note 2: Using continuously under heavy loads (e.g. the application of Weight: 0.023 g (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit VFM (1) IFM = 0.5 A (pulse test)  0.35  Peak forward voltage VFM (2) IFM = 1 A (pulse test)  0.37  V VFM (3) IFM = 3 A (pulse test)  0.42 0.45 IRRM (1) VRRM = 5 V (pulse test)  3  Repetitive peak reverse current µA IRRM (2) VRRM = 30 V (pulse test)  30 500 Junction capacitance Cj VR = 10 V, f = 1 MHz  190  pF Device mounted on a ceramic board board size : 50 mm × 50 mm  soldering land size : 2 mm × 2 mm  60 board thickness : 0.64 mm Thermal resistance(junction to ambient) Rth (j-a) Device mounted on a glass-epoxy board °C/W board size : 50 mm × 50 mm soldering land size : 6 mm × 6 mm   135 board thickness : 1.6 mm Thermal resistance (junction to lead) Rth (j-ℓ)    16 Start of commercial production 2000-07 1 2018-04-04