Datasheet SEMiX302GB066HDs (Semikron) - 4
| Hersteller | Semikron |
| Beschreibung | Trench IGBT Modules |
| Seiten / Seite | 5 / 4 — SEMiX302GB066HDs. Rev. 1 – 13.01.2012. © by SEMIKRON |
| Dateiformat / Größe | PDF / 403 Kb |
| Dokumentensprache | Englisch |
SEMiX302GB066HDs. Rev. 1 – 13.01.2012. © by SEMIKRON
Modelllinie für dieses Datenblatt
Textversion des Dokuments
SEMiX302GB066HDs
Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
4 Rev. 1 – 13.01.2012 © by SEMIKRON
Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
4 Rev. 1 – 13.01.2012 © by SEMIKRON