Datasheet ALD1107, ALD1117 (Advanced Linear Devices) - 3

HerstellerAdvanced Linear Devices
BeschreibungQuad/Dual P-channel Matched Pair Mosfet Array
Seiten / Seite9 / 3 — TYPICAL PERFORMANCE CHARACTERISTICS. OUTPUT CHARACTERISTICS. LOW VOLTAGE …
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TYPICAL PERFORMANCE CHARACTERISTICS. OUTPUT CHARACTERISTICS. LOW VOLTAGE OUTPUT. CHARACTERISTICS. VBS = 0V. VGS = -10V. TA = +25

TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS LOW VOLTAGE OUTPUT CHARACTERISTICS VBS = 0V VGS = -10V TA = +25

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TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS LOW VOLTAGE OUTPUT CHARACTERISTICS
-10 500
VBS = 0V VBS = 0V VGS = -10V TA = +25
°
C TA = 25
°
C -8V
-7.5
VGS = -10V
250
-6V
A)
-4V
(mA) (µ
-8V -2V
-5.0 0 DS(ON)
-6V
I DS(ON) I -2.5 -250
-4V
DRAIN SOURCE ON CURRENT
-2V
DRAIN SOURCE ON CURRENT 0 -500 0 -2 -4 -6 -8 -10 -320 -160 0 +160 +320 DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) DRAIN SOURCE ON VOLTAGE - VDS(ON) (mV)
FORWARD TRANSCONDUCTANCE vs. TRANSFER CHARACTERISTIC DRAIN-SOURCE VOLTAGE WITH SUBSTRATE BIAS
1.0 -20
TA = +25
°
C IDS = -5mA
0.5
VBS = 0V
-15
2V
0.2 A)
4V

6V 8V
0.1 -10
10V
(mmho)
IDS = -1mA TA = +125
°
C
0.05 DS(ON) I -5 0.02
VBS = 0V VGS = VDS f = 1KHz T
DRAIN SOURCE ON CURRENT
A = +25
°
C
FORWARD TRANSCONDUCTANCE 0.01 0 0 -2 -4 -6 -8 -10 0 -0.8 -1.6 -2.4 -3.2 -4.0 DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) GATE SOURCE ON VOLTAGE - VGS(ON) (V)
DRAIN SOURCE ON RESISTANCE vs. DRAIN SOURCE OFF CURRENT vs. GATE-SOURCE VOLTAGE AMBIENT TEMPERATURE
100 1000
VDS = 0.4V V V DS = 10V BS = 0V VGS = VBS = 0V
)
TA = +125
°
C
Ω 10 100 (K (pA) DS(ON) DS(OFF) R 1 R 10
TA = +25
°
C
DRAIN SOURCE OFF CURRENT DRAIN SOURCE ON RESISTANCE 0.1 1 0 -2 -4 -6 -8 -10 -50 -25 0 +25 +50 +75 +100 +125 GATE SOURCE ON VOLTAGE - VGS(ON) (V) AMBIENT TEMPERATURE - TA (°C)
ALD1107/ALD1117
Advanced Linear Devices 3 of 9