Datasheet 1N4702 (Vishay) - 4

HerstellerVishay
BeschreibungSilicon Epitaxial Planar Z–Diodes
Seiten / Seite6 / 4 — 1N4678...1N4717 Vishay Telefunken
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DokumentenspracheEnglisch

1N4678...1N4717 Vishay Telefunken

1N4678...1N4717 Vishay Telefunken

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1N4678...1N4717 Vishay Telefunken
200 50 P 40 tot=500mW 150 ) Tamb=25°C VR = 2V T 30 j = 25°C 100 20 I – Z-Current ( mA Z 50 D C – Diode Capacitance ( pF ) 10 0 0 0 5 10 15 20 25 15 20 25 30 35 95 9601 VZ – Z-Voltage ( V ) 95 9607 VZ – Z-Voltage ( V ) Figure 5. Diode Capacitance vs. Z–Voltage Figure 8. Z–Current vs. Z–Voltage 100 1000 ) W 10 IZ=1mA Tj = 25°C 100 1 5mA 0.1 10 10mA ferential Z-Resistance ( ) I – Forward Current ( mA F 0.01 r – Dif Z 0.001 Tj = 25°C 0 0.2 0.4 0.6 0.8 1.0 1 0 5 10 15 20 25 95 9605 VF – Forward Voltage ( V ) 95 9606 VZ – Z-Voltage ( V ) Figure 6. Forward Current vs. Forward Voltage Figure 9. Differential Z–Resistance vs. Z–Voltage 100 80 ) Ptot=500mW Tamb=25°C 60 40 I – Z-Current ( mA Z 20 0 0 4 8 12 16 20 95 9604 VZ – Z-Voltage ( V ) Figure 7. Z–Current vs. Z–Voltage www.vishay.de • FaxBack +1-408-970-5600 Document Number 85586 4 (6) Rev. 2, 01-Apr-99