Datasheet IRF840L, SiHF840L (Vishay) - 8

HerstellerVishay
BeschreibungPower MOSFET
Seiten / Seite10 / 8 — Package Information. I2PAK (TO-262) (HIGH VOLTAGE). MILLIMETERS. INCHES. …
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Package Information. I2PAK (TO-262) (HIGH VOLTAGE). MILLIMETERS. INCHES. DIM. MIN. MAX. Notes

Package Information I2PAK (TO-262) (HIGH VOLTAGE) MILLIMETERS INCHES DIM MIN MAX Notes

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Package Information
Vishay Siliconix
I2PAK (TO-262) (HIGH VOLTAGE)
(Datum A) A B E A c2 E A L1 Seating D1 plane D C C L2 B B L A c E1 3 x b2 A1 Section A - A 3 x b Base 2 x e metal Plating b1, b3 0.010 M A M B c c1 (b, b2) Lead tip Section B - B and C - C Scale: None
MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D 8.38 9.65 0.330 0.380 A1 2.03 3.02 0.080 0.119 D1 6.86 - 0.270 - b 0.51 0.99 0.020 0.039 E 9.65 10.67 0.380 0.420 b1 0.51 0.89 0.020 0.035 E1 6.22 - 0.245 - b2 1.14 1.78 0.045 0.070 e 2.54 BSC 0.100 BSC b3 1.14 1.73 0.045 0.068 L 13.46 14.10 0.530 0.555 c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.065 c1 0.38 0.58 0.015 0.023 L2 3.56 3.71 0.140 0.146 c2 1.14 1.65 0.045 0.065 ECN: S-82442-Rev. A, 27-Oct-08 DWG: 5977
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost extremes of the plastic body. 3. Thermal pad contour optional within dimension E, L1, D1, and E1. 4. Dimension b1 and c1 apply to base metal only. Document Number: 91367 www.vishay.com Revision: 27-Oct-08 1