Datasheet IRFP140 (Vishay) - 4
| Hersteller | Vishay |
| Beschreibung | Power MOSFET |
| Seiten / Seite | 11 / 4 — IRFP140. Fig. 10a - Switching Time Test Circuit. Fig. 7 - Typical … |
| Dateiformat / Größe | PDF / 1.3 Mb |
| Dokumentensprache | Englisch |
IRFP140. Fig. 10a - Switching Time Test Circuit. Fig. 7 - Typical Source-Drain Diode Forward Voltage
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IRFP140
www.vishay.com Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS 90 %
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10 % VGS t t t t d(on) r d(off) f
Fig. 10b - Switching Time Waveforms Fig. 8 - Maximum Safe Operating Area Fig. 9 - Maximum Drain Current vs. Case Temperature
S22-0045-Rev. C, 24-Jan-2022
4
Document Number: 91202 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS 90 %
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10 % VGS t t t t d(on) r d(off) f
Fig. 10b - Switching Time Waveforms Fig. 8 - Maximum Safe Operating Area Fig. 9 - Maximum Drain Current vs. Case Temperature
S22-0045-Rev. C, 24-Jan-2022
4
Document Number: 91202 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000