Datasheet 2N6282 (Inchange Semiconductor) - 2

isc Silicon NPN Darlingtion Power Transistor 2N6282 ELECTRICAL CHARACTERISTICS TC=25
℃
unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCEO(SUS) Col ector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 60 V VCE(sat)-1 Col ector-Emitter Saturation Voltage IC= 10A; IB= 40mA 2.0 V VCE(sat)-2 Col ector-Emitter Saturation Voltage IC= 20A; IB= 200mA 3.0 V VBE(sat) Base-Emitter Saturation voltage IC= 20A; IB= 200mA 4.0 V VBE(on) Base-Emitter On voltage IC= 10A; VCE= 3V 2.8 V ICEO Col ector Cutoff current VCE= 30V; IB=0 1.0 mA IEBO Emitter Cut-off current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 10A; VCE= 3V 750 18000 hFE-2 DC Current Gain IC= 20A; VCE= 3V 100
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Document Outline isc Silicon NPN Darlingtion Power Transistor DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(TC=25℃) THERMAL CHARACTERISTICS isc Silicon NPN Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS