Datasheet 2N6068 - 2N6075B (Digitron Semiconductors)
| Hersteller | Digitron Semiconductors |
| Beschreibung | 40A SILICON TRIACS |
| Seiten / Seite | 5 / 1 — High-reliability discrete products. and engineering services since 1977. … |
| Dateiformat / Größe | PDF / 956 Kb |
| Dokumentensprache | Englisch |
High-reliability discrete products. and engineering services since 1977. FEATURES. MAXIMUM RATINGS. Rating. Symbol. Value. Unit
Modelllinie für dieses Datenblatt
Textversion des Dokuments
2N6068,A,B-2N6075,A,B
High-reliability discrete products
40A SILICON TRIACS
and engineering services since 1977 FEATURES
• Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS Rating Symbol Value Unit Repetitive peak off-state voltage
(1)
(TJ = 110°C)
2N6068, 2N6068A, 2N6068B 25 2N6069, 2N6069A, 2N6069B 50 2N6070, 2N6070A, 2N6070B 100 2N6071, 2N6071A, 2N6071B VDRM 200 Volts 2N6072, 2N6072A, 2N6072B 300 2N6073, 2N6073A, 2N6073B 400 2N6074, 2N6074A, 2N6074B 500 2N6075, 2N6075A, 2N6075B
600
On-state current RMS
(TC = 85°C)
IT(RMS) 4.0 Amp
Peak surge current
(one full cycle, 60Hz, TJ = -40 to 110°C)
ITSM 30 Amp
Circuit fusing considerations
(TJ = -40 to 110°C, t = 1.0 to 8.3ms)
I2t 3.6 A2s
Peak gate power
PGM 10 Watts
Average gate power
PG(AV) 0.5 Watt
Peak gate voltage
VGM 5.0 Volts
Operating junction temperature
TJ -40 to 110 °C
Storage temperature
Tstg -40 to 150 °C
Mounting torque (6-32) screw
(2)
- 8.0 In. lb.
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal resistance, junction to case
RӨJC 3.5 °C/W
Thermal resistance, case to ambient
RӨCA 60 °C/W NOTE 1: Ratings apply for gate open conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. NOTE 2: Torque rating applies with use of torque washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common.
ELECTRICAL CHARACTERISTICS @ 25°C unless otherwise noted
.
Characteristic Symbol Min Typ Max Unit Peak blocking current
(either direction)
IDRM mA Rated VDRM @ TJ = 110°C, gate open - - 2.0
On-state voltage
(either direction) VTM Volts ITM = 6.0A peak - - 2.0
Peak gate trigger voltage Main terminal voltage = 12Vdc, RL = 100ohms, TJ = -40°C
MT2(+), G(+):MT2(-), G(-) All types - 1.4 2.5 MT2(+), G(-): MT2(-), G(+) 2N6068A, B thru 2N6075A, B VGTM - 1.4 2.5 Volts
Main terminal voltage = rated VDRM, RL = 10k ohms, TJ = 110°C
MT2(+), G(+):MT2(-), G(-) All types 0.2 - - MT2(+), G(-): MT2(-), G(+) 2N6068A, B thru 2N6075A, B 0.2 - - Rev. 20130131
High-reliability discrete products
40A SILICON TRIACS
and engineering services since 1977 FEATURES
• Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS Rating Symbol Value Unit Repetitive peak off-state voltage
(1)
(TJ = 110°C)
2N6068, 2N6068A, 2N6068B 25 2N6069, 2N6069A, 2N6069B 50 2N6070, 2N6070A, 2N6070B 100 2N6071, 2N6071A, 2N6071B VDRM 200 Volts 2N6072, 2N6072A, 2N6072B 300 2N6073, 2N6073A, 2N6073B 400 2N6074, 2N6074A, 2N6074B 500 2N6075, 2N6075A, 2N6075B
600
On-state current RMS
(TC = 85°C)
IT(RMS) 4.0 Amp
Peak surge current
(one full cycle, 60Hz, TJ = -40 to 110°C)
ITSM 30 Amp
Circuit fusing considerations
(TJ = -40 to 110°C, t = 1.0 to 8.3ms)
I2t 3.6 A2s
Peak gate power
PGM 10 Watts
Average gate power
PG(AV) 0.5 Watt
Peak gate voltage
VGM 5.0 Volts
Operating junction temperature
TJ -40 to 110 °C
Storage temperature
Tstg -40 to 150 °C
Mounting torque (6-32) screw
(2)
- 8.0 In. lb.
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal resistance, junction to case
RӨJC 3.5 °C/W
Thermal resistance, case to ambient
RӨCA 60 °C/W NOTE 1: Ratings apply for gate open conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. NOTE 2: Torque rating applies with use of torque washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common.
ELECTRICAL CHARACTERISTICS @ 25°C unless otherwise noted
.
Characteristic Symbol Min Typ Max Unit Peak blocking current
(either direction)
IDRM mA Rated VDRM @ TJ = 110°C, gate open - - 2.0
On-state voltage
(either direction) VTM Volts ITM = 6.0A peak - - 2.0
Peak gate trigger voltage Main terminal voltage = 12Vdc, RL = 100ohms, TJ = -40°C
MT2(+), G(+):MT2(-), G(-) All types - 1.4 2.5 MT2(+), G(-): MT2(-), G(+) 2N6068A, B thru 2N6075A, B VGTM - 1.4 2.5 Volts
Main terminal voltage = rated VDRM, RL = 10k ohms, TJ = 110°C
MT2(+), G(+):MT2(-), G(-) All types 0.2 - - MT2(+), G(-): MT2(-), G(+) 2N6068A, B thru 2N6075A, B 0.2 - - Rev. 20130131