2N6068,A,B-2N6075,A,B High-reliability discrete products 40A SILICON TRIACS and engineering services since 1977FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGSRatingSymbolValueUnitRepetitive peak off-state voltage (1)
IT(RMS) 4.0 Amp Peak surge current (one full cycle, 60Hz, TJ = -40 to 110°C)
ITSM 30 Amp Circuit fusing considerations (TJ = -40 to 110°C, t = 1.0 to 8.3ms)
I2t 3.6 A2s Peak gate power PGM 10 Watts Average gate power PG(AV) 0.5 Watt Peak gate voltage VGM 5.0 Volts Operating junction temperature TJ -40 to 110 °C Storage temperature Tstg -40 to 150 °C Mounting torque (6-32) screw (2)
- 8.0 In. lb. THERMAL CHARACTERISTICSCharacteristicSymbolMaxUnitThermal resistance, junction to case RӨJC 3.5 °C/W Thermal resistance, case to ambient RӨCA 60 °C/W NOTE 1: Ratings apply for gate open conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. NOTE 2: Torque rating applies with use of torque washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common. ELECTRICAL CHARACTERISTICS @ 25°C unless otherwise noted . CharacteristicSymbolMinTypMaxUnitPeak blocking current (either direction)
IDRM mA Rated VDRM @ TJ = 110°C, gate open - - 2.0 On-state voltage (either direction) VTM Volts ITM = 6.0A peak - - 2.0 Peak gate trigger voltageMain terminal voltage = 12Vdc, RL = 100ohms, TJ = -40°C MT2(+), G(+):MT2(-), G(-) All types - 1.4 2.5 MT2(+), G(-): MT2(-), G(+) 2N6068A, B thru 2N6075A, B VGTM - 1.4 2.5 Volts Main terminal voltage = rated VDRM, RL = 10k ohms, TJ = 110°C MT2(+), G(+):MT2(-), G(-) All types 0.2 - - MT2(+), G(-): MT2(-), G(+) 2N6068A, B thru 2N6075A, B 0.2 - - Rev. 20130131