Datasheet SI1470DH (Vishay) - 4
| Hersteller | Vishay |
| Beschreibung | N-Channel 30 V (D-S) MOSFET |
| Seiten / Seite | 7 / 4 — Si1470DH. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. … |
| Dateiformat / Größe | PDF / 126 Kb |
| Dokumentensprache | Englisch |
Si1470DH. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. RDS(on) vs. VGS vs. Temperature. Threshold Voltage
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Si1470DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted 10 0.16 (Ω e I D = 3.7 A c n atsi 0.12 s T = 150 °C (A) J T = 25 °C J e 1 R-nO T A = 125 °C e Current cru 0.08 o S- T o A = 25 °C t- - Source 0.1 nia I S r D 0.04 -) )no(SDR 0.01 0.00 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage RDS(on) vs. VGS vs. Temperature
1.5 30 25 1.3 I D = 250 µA 20 ) 1.1 ) V( W ) ( h t r ( e 15 S w G o V 0.9 P 10 0.7 5 0.5 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 600 TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power
100 Limited by RDS(on)* 10 10 ms (A) 1 100 ms Current 1 s rain 10 s D 0.1 - DC I D 0.01 TA = 25 °C Single Pulse 0.0010.1 1 10 100 VDS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com Document Number: 74277 4 S10-0646-Rev. B, 22-Mar-10
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted 10 0.16 (Ω e I D = 3.7 A c n atsi 0.12 s T = 150 °C (A) J T = 25 °C J e 1 R-nO T A = 125 °C e Current cru 0.08 o S- T o A = 25 °C t- - Source 0.1 nia I S r D 0.04 -) )no(SDR 0.01 0.00 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage RDS(on) vs. VGS vs. Temperature
1.5 30 25 1.3 I D = 250 µA 20 ) 1.1 ) V( W ) ( h t r ( e 15 S w G o V 0.9 P 10 0.7 5 0.5 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 600 TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power
100 Limited by RDS(on)* 10 10 ms (A) 1 100 ms Current 1 s rain 10 s D 0.1 - DC I D 0.01 TA = 25 °C Single Pulse 0.0010.1 1 10 100 VDS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com Document Number: 74277 4 S10-0646-Rev. B, 22-Mar-10