Datasheet BAV99 (Nexperia) - 5

Nexperia BAV99 High-speed switching diode
mbg446 mbg704 0.8 102 Cd (pF) IFSM (A) 0.6 10 0.4 1 0.2 0 10-1 0 4 8 12 16 V 1 104 103 10 102 R (V) tp (µs) f = 1 MHz; Tamb = 25 °C Based on square wave currents.
Fig. 3. Diode capacitance as a function of reverse
Tj(init) = 25 °C
voltage; typical values Fig. 4. Non-repetitive peak forward current as a function of pulse duration; typical values 11. Test information
tr tp t D.U.T. 10 % + I R F trr S = 50 Ω IF SAMPLING t OSCILLOSCOPE V = VR + IF × RS Ri = 50 Ω (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns
Fig. 5. Reverse recovery time test circuit and waveforms
I 1 kΩ 450 Ω I V 90 % RS = 50 Ω OSCILLOSCOPE D.U.T. VFR Ri = 50 Ω 10 % t t tr tp input signal output signal mga882 Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005
Fig. 6. Forward recovery voltage test circuit and waveforms
BAV99 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. Al rights reserved
Product data sheet 1 July 2022 5 / 10
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents