Datasheet BAV74LT1G (ON Semiconductor) - 3
| Hersteller | ON Semiconductor |
| Beschreibung | Monolithic Dual Switching Diode |
| Seiten / Seite | 4 / 3 — PACKAGE DIMENSIONS. SOT−23 (TO−236). SCALE 4:1. MILLIMETERS. INCHES. DIM. … |
| Revision | 6 |
| Dateiformat / Größe | PDF / 146 Kb |
| Dokumentensprache | Englisch |
PACKAGE DIMENSIONS. SOT−23 (TO−236). SCALE 4:1. MILLIMETERS. INCHES. DIM. MIN. NOM. MAX. 3X b. VIEW C. TOP VIEW. SIDE VIEW. SEE VIEW C. GENERIC
Modelllinie für dieses Datenblatt
Textversion des Dokuments
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS SOT−23 (TO−236)
CASE 318−08 ISSUE AS DATE 30 JAN 2018
SCALE 4:1 D
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
3
THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
E HE T
PROTRUSIONS, OR GATE BURRS.
1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A
0.89 1.00 1.11 0.035 0.039 0.044
3X b L1 A1
0.01 0.06 0.10 0.000 0.002 0.004
b
0.37 0.44 0.50 0.015 0.017 0.020
e VIEW C c
0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D
2.80 2.90 3.04 0.110 0.114 0.120
E
1.20 1.30 1.40 0.047 0.051 0.055
e
1.78 1.90 2.04 0.070 0.075 0.080
L
0.30 0.43 0.55 0.012 0.017 0.022
A L1
0.35 0.54 0.69 0.014 0.021 0.027
HE
2.10 2.40 2.64 0.083 0.094 0.104
T
0° −−− 10° 0° −−− 10°
A1 SIDE VIEW SEE VIEW C c GENERIC END VIEW MARKING DIAGRAM* RECOMMENDED SOLDERING FOOTPRINT
XXXMG G 1 3X XXX = Specific Device Code 2.90 0.90 M = Date Code G = Pb−Free Package *This information is generic. Please refer to 3X 0.80 0.95 device data sheet for actual part marking. PITCH Pb−Free indicator, “G” or microdot “ G”, DIMENSIONS: MILLIMETERS may or may not be present. STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8: CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE 2. EMITTER 2. BASE 2. NO CONNECTION 3. COLLECTOR 3. COLLECTOR 3. CATHODE STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14: PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE 2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE 3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20: PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE 3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26: PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE 2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE 3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION STYLE 27: STYLE 28: PIN 1. CATHODE PIN 1. ANODE 2. CATHODE 2. ANODE 3. CATHODE 3. ANODE
DOCUMENT NUMBER: 98ASB42226B
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com
PACKAGE DIMENSIONS SOT−23 (TO−236)
CASE 318−08 ISSUE AS DATE 30 JAN 2018
SCALE 4:1 D
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
3
THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
E HE T
PROTRUSIONS, OR GATE BURRS.
1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A
0.89 1.00 1.11 0.035 0.039 0.044
3X b L1 A1
0.01 0.06 0.10 0.000 0.002 0.004
b
0.37 0.44 0.50 0.015 0.017 0.020
e VIEW C c
0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D
2.80 2.90 3.04 0.110 0.114 0.120
E
1.20 1.30 1.40 0.047 0.051 0.055
e
1.78 1.90 2.04 0.070 0.075 0.080
L
0.30 0.43 0.55 0.012 0.017 0.022
A L1
0.35 0.54 0.69 0.014 0.021 0.027
HE
2.10 2.40 2.64 0.083 0.094 0.104
T
0° −−− 10° 0° −−− 10°
A1 SIDE VIEW SEE VIEW C c GENERIC END VIEW MARKING DIAGRAM* RECOMMENDED SOLDERING FOOTPRINT
XXXMG G 1 3X XXX = Specific Device Code 2.90 0.90 M = Date Code G = Pb−Free Package *This information is generic. Please refer to 3X 0.80 0.95 device data sheet for actual part marking. PITCH Pb−Free indicator, “G” or microdot “ G”, DIMENSIONS: MILLIMETERS may or may not be present. STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8: CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE 2. EMITTER 2. BASE 2. NO CONNECTION 3. COLLECTOR 3. COLLECTOR 3. CATHODE STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14: PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE 2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE 3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20: PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE 3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26: PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE 2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE 3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION STYLE 27: STYLE 28: PIN 1. CATHODE PIN 1. ANODE 2. CATHODE 2. ANODE 3. CATHODE 3. ANODE
DOCUMENT NUMBER: 98ASB42226B
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com