Datasheet SUD19N20-90 (Vishay) - 3
| Hersteller | Vishay |
| Beschreibung | N-Channel 200 V (D-S) 175 °C MOSFET |
| Seiten / Seite | 8 / 3 — SUD19N20-90. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| Dateiformat / Größe | PDF / 171 Kb |
| Dokumentensprache | Englisch |
SUD19N20-90. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics. Transconductance
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SUD19N20-90
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 7 V 6 V 30 30 rrent (A) u 20 C 20 in ra TC = 125 °C - Drain Current (A) - D I D 5 V I D 10 10 25 °C - 55 °C 4 V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 V V DS - Drain-to-Source Voltage (V) GS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
70 0.20 60 TC = - 55 °C ) 0.15 50 25 °C ctance (S) u 40 0.10 V 125 °C GS = 6 V 30 - On-Resistance ( ranscond VGS = 10 V - T 20 fs DS(on) g R 0.05 10 0 0.00 0 10 20 30 40 0 10 20 30 40 ID - Drain Current (A) ID - Drain Current (A)
Transconductance On-Resistance vs. Drain Current
2500 20 VDS = 100 V 2000 16 ID = 19 A Ciss oltage (V) 1500 12 1000 8 - Capacitance (pF) C - Gate-to-Source V 500 GS 4 C V rss Coss 0 0 0 40 80 120 160 200 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Capacitance Gate Charge
Document Number: 71767 www.vishay.com S10-2245-Rev. E, 04-Oct-10 3
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 7 V 6 V 30 30 rrent (A) u 20 C 20 in ra TC = 125 °C - Drain Current (A) - D I D 5 V I D 10 10 25 °C - 55 °C 4 V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 V V DS - Drain-to-Source Voltage (V) GS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
70 0.20 60 TC = - 55 °C ) 0.15 50 25 °C ctance (S) u 40 0.10 V 125 °C GS = 6 V 30 - On-Resistance ( ranscond VGS = 10 V - T 20 fs DS(on) g R 0.05 10 0 0.00 0 10 20 30 40 0 10 20 30 40 ID - Drain Current (A) ID - Drain Current (A)
Transconductance On-Resistance vs. Drain Current
2500 20 VDS = 100 V 2000 16 ID = 19 A Ciss oltage (V) 1500 12 1000 8 - Capacitance (pF) C - Gate-to-Source V 500 GS 4 C V rss Coss 0 0 0 40 80 120 160 200 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Capacitance Gate Charge
Document Number: 71767 www.vishay.com S10-2245-Rev. E, 04-Oct-10 3