Datasheet ADG511, ADG512, ADG513 (Analog Devices) - 7

HerstellerAnalog Devices
BeschreibungLC2MOS Precision 5 V/3 V Quad SPST Switches
Seiten / Seite12 / 7 — Typical Performance Characteristics–ADG511/ADG512/ADG513. 10mA. VDD = …
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Typical Performance Characteristics–ADG511/ADG512/ADG513. 10mA. VDD = +5V. TA = 25. VSS = –5V. 1mA. 100. DD = +3V. I–, I+. VSS = –3V. ONR

Typical Performance Characteristics–ADG511/ADG512/ADG513 10mA VDD = +5V TA = 25 VSS = –5V 1mA 100 DD = +3V I–, I+ VSS = –3V ONR

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Typical Performance Characteristics–ADG511/ADG512/ADG513 50 10mA VDD = +5V TA = 25 C VSS = –5V 1mA 40 100 A V 30 DD = +3V I–, I+ VSS = –3V 10 A ONR I SUPPLY 20 1 A V DD = +5V 1 SW V 4 SW 10 SS = –5V 100nA 0 10nA –5 –4 –3 –2 –1 0 1 2 3 4 5 10 100 1k 10k 100k 1M 10M V FREQUENCY – Hz D OR VS – DRAIN OR SOURCE VOLTAGE – V
TPC 1. On Resistance as a Function of V TPC 4. Supply Current vs. Input Switching Frequency D (VS) Dual Supplies
50 10 V V DD = +5V DD = +5V V V SS = –5V SS = –5V VS = 5V 40 I V D (OFF) D = 5V 1 nA – 30 125 C 0.1 ONR 85 C 20 25 C ID (ON) LEAKAGE CURRENT 0.01 10 IS (OFF) 0 0.001 –5 –4 –3 –2 –1 0 1 2 3 4 5 25 35 45 55 65 75 85 95 105 115 125 VD OR VS – DRAIN OR SOURCE VOLTAGE – V TEMPERATURE – C
TPC 2. On Resistance as a Function of VD (VS) for TPC 5. Leakage Currents as a Function of Temperature Different Temperatures
90 120 TA = 25 C VDD = +5V 80 VSS = –5V VDD = 3V V 100 70 SS = 0V dB – 60 80 ONR 50 V OFF ISOLATION 40 DD = 5V VSS = 0V 60 30 20 40 0 1 2 3 4 5 100 1k 10k 100k 1M 10M VD OR VS – DRAIN OR SOURCE VOLTAGE – V FREQUENCY – Hz
TPC 3. On Resistance as a Function of V TPC 6. Off Isolation vs. Frequency D (VS) Single Supply REV. C –7–