Datasheet ADG1404 (Analog Devices) - 4

HerstellerAnalog Devices
Beschreibung1.5 Ω On Resistance, ±15 V/12 V/±5 V, 4:1, iCMOS Multiplexer
Seiten / Seite16 / 4 — ADG1404. Data Sheet. 12 V SINGLE SUPPLY. Table 2. Parameter. 25°C. −40°C …
RevisionB
Dateiformat / GrößePDF / 469 Kb
DokumentenspracheEnglisch

ADG1404. Data Sheet. 12 V SINGLE SUPPLY. Table 2. Parameter. 25°C. −40°C to +85°C. −40°C to +125°C. Unit. Test Conditions/Comments

ADG1404 Data Sheet 12 V SINGLE SUPPLY Table 2 Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

Modelllinie für dieses Datenblatt

Textversion des Dokuments

link to page 13 link to page 13 link to page 13 link to page 13 link to page 14 link to page 15 link to page 15 link to page 14 link to page 15 link to page 13 link to page 13 link to page 13 link to page 13
ADG1404 Data Sheet 12 V SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 2. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance (RON) 2.8 Ω typ VS = 0 V to 10 V, IS = −10 mA; see Figure 22 3.5 4.3 4.8 Ω max VDD = 10.8 V, VSS = 0 V On-Resistance Match 0.13 Ω typ VS = 0 V to 10 V, IS = −10 mA Between Channels (ΔRON) 0.21 0.23 0.25 Ω max On-Resistance Flatness (RFLAT(ON)) 0.6 Ω typ VS = 0V to 10 V, IS = −10 mA 1.1 1.2 1.3 Ω max LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V Source Off Leakage, IS (Off) ±0.02 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 23 ±0.55 ±2 ±12.5 nA max Drain Off Leakage, ID (Off) ±0.03 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 23 ±0.55 ±4 ±30 nA max Channel On Leakage, ID, IS (On) ±0.1 nA typ VS = VD = 1 V or 10 V; see Figure 24 ±1.5 ±4 ±30 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.001 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3.5 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 230 ns typ RL = 300 Ω, CL = 35 pF 300 375 430 ns max VS = 8 V; see Figure 29 tON (EN) 180 ns typ RL = 300 Ω, CL = 35 pF 240 295 335 ns max VS = 8 V; see Figure 31 tOFF (EN) 115 ns typ RL = 300 Ω, CL = 35 pF 160 190 220 ns max VS = 8 V; see Figure 31 Break-Before-Make Time Delay, tBBM 100 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 8 V; see Figure 30 Charge Injection 30 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 32 Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 100kHz; see Figure 25 Channel-to-Channel Crosstalk 82 dB typ RL = 50 Ω, CL = 5 pF, f = 100kHz; see Figure 27 −3 dB Bandwidth 35 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 26 Insertion Loss −0.3 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 CS (Off) 39 pF typ f = 1 MHz, VS = 6 V CD (Off) 150 pF typ f = 1 MHz, VS = 6 V CD, CS (On) 217 pF typ f = 1 MHz, VS = 6 V POWER REQUIREMENTS VDD = 13.2 V IDD 0.001 µA typ Digital inputs = 0 V or VDD 1 µA max IDD 170 µA typ Digital inputs = 5 V 285 µA max VDD 5/16.5 V min/max GND = 0 V, VSS = 0 V 1 Guaranteed by design, not subject to production test. Rev. B | Page 4 of 16 Document Outline Features Applications Functional Block Diagram General Description Product Highlights Revision History Specifications 15 V Dual Supply 12 V Single Supply 5 V Dual Supply Continuous Current, S or D Absolute Maximum Ratings ESD Caution Pin Configurations and Function Descriptions Truth Table Typical Performance Characteristics Terminology Test Circuits Outline Dimensions Ordering Guide