Datasheet ADG1419 (Analog Devices) - 4

HerstellerAnalog Devices
Beschreibung2.1 Ω On Resistance, ±15 V/+12 V/±5 V, iCMOS SPDT Switch
Seiten / Seite16 / 4 — ADG1419. Data Sheet. Parameter. 25°C. −40°C to +85°C. −40°C to +125°C. …
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DokumentenspracheEnglisch

ADG1419. Data Sheet. Parameter. 25°C. −40°C to +85°C. −40°C to +125°C. Unit. Test Conditions/Comments. +12 V SINGLE SUPPLY

ADG1419 Data Sheet Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments +12 V SINGLE SUPPLY

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ADG1419 Data Sheet Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 0.002 μA typ Digital inputs = 0 V or VDD 1.0 μA max IDD, 8-Lead MSOP 58 μA typ Digital inputs = 5 V 95 μA max IDD, 8-Lead LFCSP 120 μA typ Digital inputs = 5 V 190 μA max ISS 0.002 μA typ Digital inputs = 0 V, 5 V, or VDD 1.0 μA max VDD/VSS ±4.5/±16.5 V min/max Ground = 0 V 1 Guaranteed by design, not subject to production test.
+12 V SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 2. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance, RON 4 Ω typ VS = 0 V to 10 V, IS = −10 mA; see Figure 22 4.6 5.5 6.2 Ω max VDD = +10.8 V, VSS = 0 V On-Resistance Match Between 0.08 Ω typ VS = 0 V to 10 V, IS = −10 mA Channels, ∆RON 0.25 0.3 0.35 Ω max On-Resistance Flatness, RFLAT (ON) 1.2 Ω typ VS = 0 V to 10 V, IS = −10 mA 1.5 1.75 1.9 Ω max LEAKAGE CURRENTS VDD = +13.2 V, VSS = 0 V Source Off Leakage, IS (Off ) ±0.1 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 23 ±0.5 ±2 ±75 nA max Drain Off Leakage, ID (Off ) ±0.2 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 23 ±0.6 ±3 ±100 nA max Channel On Leakage, ID, IS (On) ±0.2 nA typ VS = VD = 1 V or 10 V; see Figure 24 ±1 ±3 ±100 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.005 μA typ VIN = VGND or VDD ±0.1 μA max Digital Input Capacitance, CIN 4 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 200 ns typ RL = 300 Ω, CL = 35 pF 255 265 370 ns max VS = 8 V; see Figure 25 tON (EN) 145 ns typ RL = 300 Ω, CL = 35 pF 190 220 245 ns max VS = 8 V; see Figure 27 tOFF (EN) 130 ns typ RL = 300 Ω, CL = 35 pF 170 205 220 ns max VS = 8 V; see Figure 27 Break-Before-Make Time Delay, tD 55 ns typ RL = 300 Ω, CL = 35 pF 33 ns min VS1 = VS2 = 8 V; see Figure 26 Charge Injection 13 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 28 Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 Rev. A | Page 4 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAMS GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ±15 V DUAL SUPPLY +12 V SINGLE SUPPLY ±5 V DUAL SUPPLY CONTINUOUS CURRENT PER CHANNEL, S OR D ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY OUTLINE DIMENSIONS ORDERING GUIDE