Datasheet ADG1414 (Analog Devices) - 3

HerstellerAnalog Devices
Beschreibung9.5 Ω RON ±15 V/+12 V/±5 V iCMOS Serially-Controlled Octal SPST Switches
Seiten / Seite19 / 3 — Data Sheet. ADG1414. SPECIFICATIONS ±15 V DUAL SUPPLY. Table 1. −40°C to …
RevisionB
Dateiformat / GrößePDF / 536 Kb
DokumentenspracheEnglisch

Data Sheet. ADG1414. SPECIFICATIONS ±15 V DUAL SUPPLY. Table 1. −40°C to −40°C to. Parameter. +25°C. +85°C. +125°C. Unit

Data Sheet ADG1414 SPECIFICATIONS ±15 V DUAL SUPPLY Table 1 −40°C to −40°C to Parameter +25°C +85°C +125°C Unit

Modelllinie für dieses Datenblatt

Textversion des Dokuments

link to page 15 link to page 15 link to page 15 link to page 15 link to page 4 link to page 4 link to page 16 link to page 16 link to page 16 link to page 15 link to page 15 link to page 15 link to page 15 link to page 15 link to page 4
Data Sheet ADG1414 SPECIFICATIONS ±15 V DUAL SUPPLY
VDD = 15 V ± 10%, VSS = −15 V ± 10%, VL = 2.7 V to 5.5 V, GND = 0 V, unless otherwise noted.
Table 1. −40°C to −40°C to Parameter +25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VSS to VDD V On Resistance (RON) 9.5 Ω typ VDD = +13.5 V, VSS = −13.5 V, VS = ±10 V, IS = −10 mA; see Figure 23 11.5 14 16 Ω max On-Resistance Match Between Channels (ΔRON) 0.55 Ω typ VDD = +13.5 V, VSS = −13.5 V, VS = ±10 V, IS = −10 mA 1 1.5 1.7 Ω max On-Resistance Flatness (RFLAT (ON)) 1.6 Ω typ VDD = +13.5 V, VSS = −13.5 V, VS = ±10 V, IS = −10 mA 1.9 2.15 2.3 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off) ±0.05 nA typ VS = ±10 V, VD = ∓10 V; see Figure 24 ±0.15 ±1 ±2 nA max Drain Off Leakage, ID (Off) ±0.05 nA typ VS = ±10 V, VD = ∓10 V; see Figure 24 ±0.15 ±1 ±2 nA max Channel On Leakage, ID, IS (On) ±0.1 nA typ VS = VD = ±10 V; see Figure 25 ±0.3 ±2 ±4 nA max DIGITAL INPUTS Input High Voltage (VINH) 2.0 V min Input Low Voltage (VINL) 0.8 V max Input Current ±0.001 µA typ VIN = VGND or VL ±0.1 µA max Digital Input Capacitance (CIN) 4 pF typ LOGIC OUTPUTS (SDO) Output Low Voltage (VOL)1 0.4 V max ISINK = 3 mA 0.6 V max ISINK = 6 mA High Impedance Leakage Current 0.001 µA typ ±1 µA max High Impedance Output Capacitance1 4 pF typ DYNAMIC CHARACTERISTICS1 tON 75 ns typ RL = 100 Ω, CL = 35 pF 93 110 120 ns max VS = 10 V; see Figure 30 tOFF 25 ns typ RL = 100 Ω, CL = 35 pF 35 35 35 ns max VS = 10 V; see Figure 30 Charge Injection 10 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 31 Off Isolation −73 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 Channel-to-Channel Crosstalk −75 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 27 Total Harmonic Distortion (THD + N) 0.05 % typ RL = 110 Ω, 15 V p-p, f = 20 Hz to 20 kHz; see Figure 29 −3 dB Bandwidth 256 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 28 Insertion Loss 0.55 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 28 CD, CS (Off) 8 pF typ f = 1 MHz CD, CS (On) 32 pF typ f = 1 MHz Rev. B | Page 3 of 19 Document Outline Features Applications Functional Block Diagram Product Highlights Revision History Specifications ±15 V Dual Supply 12 V Single Supply ±5 V Dual Supply Continuous Current per Channel Timing Characteristics Timing Diagrams Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Terminology Theory of Operation Serial Interface Input Shift Register Power-On Reset Daisy Chaining Outline Dimensions Ordering Guide