Datasheet FDD6637 (Fairchild)

FDD
October 2005
663 7 FDD6637 35 V P-
®
35V P-Channel PowerTrench MOSFET C General Description Features h a nn
This P-Channel MOSFET has been produced using • –55 A, –35 V RDS(ON) = 11.6 mΩ @ VGS = –10 V Fairchild Semiconductor’s proprietary PowerTrench R
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DS(ON) = 18 mΩ @ VGS = –4.5 V
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technology to deliver low Rdson and optimized Bvdss • High performance trench technology for extremely capability to offer superior performance benefit in the
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low R applications. DS(ON)
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• RoHS Compliant
Applications rTr
• Inverter
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• Power Supplies
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®
D M OS D G FET S G TO-2 D-P 5 A 2 K (TO-252) S Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –35 V VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) (Note 4) –40 V VGSS Gate-Source Voltage ±25 V ID Continuous Drain Current @T A C=25°C (Note 3) –55 @TA=25°C (Note 1a) –14 Pulsed (Note 1a) –100 PD Power Dissipation @TC=25°C (Note 3) 57 W @TA=25°C (Note 1a) 3.8 @TA=25°C (Note 1b) 1.6 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
R ° θ C/W JC Thermal Resistance, Junction-to-Case (Note 1) 2.2 RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity
FDD6637 FDD6637 D-PAK (TO-252) 13’’ 12mm 2500 units ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com FDD6637 Rev C(W)