Datasheet BC337, BC337-25, BC337-40 (ON Semiconductor) - 3
| Hersteller | ON Semiconductor |
| Beschreibung | Amplifier Transistors NPN Silicon |
| Seiten / Seite | 8 / 3 — BC337, BC337−25, BC337−40. Figure 2. Active Region − Safe Operating Area. … |
| Revision | 8 |
| Dateiformat / Größe | PDF / 187 Kb |
| Dokumentensprache | Englisch |
BC337, BC337−25, BC337−40. Figure 2. Active Region − Safe Operating Area. Figure 3. DC Current Gain
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Textversion des Dokuments
BC337, BC337−25, BC337−40
1000 1000 1.0 s 1.0 ms TJ = 135 J ° = 135 C ° VCE = 1 V 100 ms T (mA) J = 25°C dc TC = 25°C GAIN dc 100 T 100 OR CURRENT A = 25°C , DC CURRENT CURRENT LIMIT FE , COLLECT h I C THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 10 10 1.0 3.0 10 30 100 0.1 1.0 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE IC, COLLECTOR CURRENT (MA)
Figure 2. Active Region − Safe Operating Area Figure 3. DC Current Gain
) TS 1.0 1.0 TJ = 25°C TA = 25°C VBE(sat) @ IC/IB = 10 0.8 0.8 TAGE (VOL VBE(on) @ VCE = 1 V TS) 0.6 0.6 IC = 10 mA 100 mA 300 mA 500 mA TAGE (VOL 0.4 0.4 OR-EMITTER VOL , VOL V 0.2 0.2 , COLLECT VCE(sat) @ IC/IB = 10 CEV 0 0 0.01 0.1 1 10 100 1 10 100 1000 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 4. Saturation Region Figure 5. “On” Voltages
100 C) +1 ° qVC for VCE(sat) 0 Cib ANCE (pF) 10 -1 ACIT TURE COEFFICIENTS (mV/ C, CAP Cob q -2 VB for VBE , TEMPERA Vθ 1 1 10 100 1000 0.1 1 10 100 I V C, COLLECTOR CURRENT (mA) R, REVERSE VOLTAGE (VOLTS)
Figure 6. Temperature Coefficients Figure 7. Capacitances http://onsemi.com 3
1000 1000 1.0 s 1.0 ms TJ = 135 J ° = 135 C ° VCE = 1 V 100 ms T (mA) J = 25°C dc TC = 25°C GAIN dc 100 T 100 OR CURRENT A = 25°C , DC CURRENT CURRENT LIMIT FE , COLLECT h I C THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 10 10 1.0 3.0 10 30 100 0.1 1.0 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE IC, COLLECTOR CURRENT (MA)
Figure 2. Active Region − Safe Operating Area Figure 3. DC Current Gain
) TS 1.0 1.0 TJ = 25°C TA = 25°C VBE(sat) @ IC/IB = 10 0.8 0.8 TAGE (VOL VBE(on) @ VCE = 1 V TS) 0.6 0.6 IC = 10 mA 100 mA 300 mA 500 mA TAGE (VOL 0.4 0.4 OR-EMITTER VOL , VOL V 0.2 0.2 , COLLECT VCE(sat) @ IC/IB = 10 CEV 0 0 0.01 0.1 1 10 100 1 10 100 1000 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 4. Saturation Region Figure 5. “On” Voltages
100 C) +1 ° qVC for VCE(sat) 0 Cib ANCE (pF) 10 -1 ACIT TURE COEFFICIENTS (mV/ C, CAP Cob q -2 VB for VBE , TEMPERA Vθ 1 1 10 100 1000 0.1 1 10 100 I V C, COLLECTOR CURRENT (mA) R, REVERSE VOLTAGE (VOLTS)
Figure 6. Temperature Coefficients Figure 7. Capacitances http://onsemi.com 3