Datasheet STGAP2SiCD (STMicroelectronics) - 5
| Hersteller | STMicroelectronics |
| Beschreibung | Galvanically isolated 4 A dual gate driver |
| Seiten / Seite | 23 / 5 — STGAP2SiCD. Recommended operating conditions. 3.3. Table 4. Recommended … |
| Dateiformat / Größe | PDF / 705 Kb |
| Dokumentensprache | Englisch |
STGAP2SiCD. Recommended operating conditions. 3.3. Table 4. Recommended operating conditions. Symbol. Parameter. Test conditions. Min
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STGAP2SiCD Recommended operating conditions 3.3 Recommended operating conditions Table 4. Recommended operating conditions Symbol Parameter Test conditions Min. Max. Unit
VDD Logic supply voltage vs. GND 3.1 5.5 V VLOGIC Logic pins voltage vs. GND 0 5.5 V iLOCK Interlocking Enable vs. GND 0 VDD V Positive supply voltage VH_x 26 V (VH_x vs. GNDISO_x) Floating grounds differential voltage GNDISO (1) A-B -1700 +1700 V (GNDISO_A - GNDISO_B) Primary to secondary ground VIORM -1200 +1200 V (GND - GNDISO_A); (GND - GNDISO_B) FSW Maximum switching frequency(2) 1 MHz tOUT Output pulse width 100 ns TJ Operating junction temperature -40 125 °C 1. Characterization data, 1200 V max. tested in production. 2. Actual limit depends on power dissipation and TJ.
DS13714
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Rev 1 page 5/23
Document Outline Cover image Product status link / summary Features Application Description 1 Block diagram 2 Pin description and connection diagram 3 Electrical data 3.1 Absolute maximum ratings 3.2 Thermal data 3.3 Recommended operating conditions 4 Electrical characteristics 5 Isolation 6 Functional description 6.1 Gate driving power supply and UVLO 6.2 Power-up, power-down and ‘safe state’ 6.3 Control Inputs 6.4 Watchdog 6.5 Thermal shutdown protection 6.6 Standby function 6.7 Interlocking function 7 Typical application diagram 8 Layout 8.1 Layout guidelines and considerations 8.2 Layout example 9 Testing and characterization information 10 Package information 10.1 SO-36W package information 11 Suggested land pattern 12 Ordering information Revision history Contents List of tables List of figures
STGAP2SiCD Recommended operating conditions 3.3 Recommended operating conditions Table 4. Recommended operating conditions Symbol Parameter Test conditions Min. Max. Unit
VDD Logic supply voltage vs. GND 3.1 5.5 V VLOGIC Logic pins voltage vs. GND 0 5.5 V iLOCK Interlocking Enable vs. GND 0 VDD V Positive supply voltage VH_x 26 V (VH_x vs. GNDISO_x) Floating grounds differential voltage GNDISO (1) A-B -1700 +1700 V (GNDISO_A - GNDISO_B) Primary to secondary ground VIORM -1200 +1200 V (GND - GNDISO_A); (GND - GNDISO_B) FSW Maximum switching frequency(2) 1 MHz tOUT Output pulse width 100 ns TJ Operating junction temperature -40 125 °C 1. Characterization data, 1200 V max. tested in production. 2. Actual limit depends on power dissipation and TJ.
DS13714
-
Rev 1 page 5/23
Document Outline Cover image Product status link / summary Features Application Description 1 Block diagram 2 Pin description and connection diagram 3 Electrical data 3.1 Absolute maximum ratings 3.2 Thermal data 3.3 Recommended operating conditions 4 Electrical characteristics 5 Isolation 6 Functional description 6.1 Gate driving power supply and UVLO 6.2 Power-up, power-down and ‘safe state’ 6.3 Control Inputs 6.4 Watchdog 6.5 Thermal shutdown protection 6.6 Standby function 6.7 Interlocking function 7 Typical application diagram 8 Layout 8.1 Layout guidelines and considerations 8.2 Layout example 9 Testing and characterization information 10 Package information 10.1 SO-36W package information 11 Suggested land pattern 12 Ordering information Revision history Contents List of tables List of figures