Datasheet 1N5283 (Central Semiconductor)
| Hersteller | Central Semiconductor |
| Beschreibung | SILICON CURRENT LIMITING DIODES |
| Seiten / Seite | 3 / 1 — 1N5283 THRU 1N5314. w w w. c e n t r a l s e m i . c o m. SILICON CURRENT … |
| Dateiformat / Größe | PDF / 420 Kb |
| Dokumentensprache | Englisch |
1N5283 THRU 1N5314. w w w. c e n t r a l s e m i . c o m. SILICON CURRENT LIMITING DIODES. DESCRIPTION:. DO-35 CASE. FEATURES:
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1N5283 THRU 1N5314 w w w. c e n t r a l s e m i . c o m SILICON CURRENT LIMITING DIODES DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5283 series types are silicon field effect current regulator diodes designed for applications requiring a constant current over a wide voltage range. These devices are manufactured in the cost effective DO-35 double plug case which provides many benefits to the user, including space savings and improved thermal characteristics. Special selections of IP (regulator current) are available for critical applications.
DO-35 CASE FEATURES:
• High Reliability • Superior Lot To Lot Consistency • Special Selections Available • Surface Mount Devices Available
MAXIMUM RATINGS:
(TL=75°C)
SYMBOL UNITS
Peak Operating Voltage POV 100 V Power Dissipation PD 600 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
Regulator Minimum Minimum Maximum Current Dynamic Knee Limiting (Note 1) Impedance Impedance Voltage Type IP @ VT=25V ZT @ VT=25V ZK @ VK=6.0V VL @ IL=0.8 x IP MIN MIN NOM MAX MΩ MΩ V mA mA mA
1N5283 0.187 0.22 0.253 25 2.75 1.0 1N5284 0.204 0.24 0.276 19 2.35 1.0 1N5285 0.230 0.27 0.311 14 1.95 1.0 1N5286 0.255 0.30 0.345 9.0 1.60 1.0 1N5287 0.281 0.33 0.380 6.6 1.35 1.0 1N5288 0.332 0.39 0.449 4.1 1.00 1.05 1N5289 0.366 0.43 0.495 3.3 0.87 1.05 1N5290 0.400 0.47 0.541 2.7 0.75 1.05 1N5291 0.476 0.56 0.644 1.90 0.56 1.10 1N5292 0.527 0.62 0.713 1.55 0.47 1.13 1N5293 0.578 0.68 0.782 1.35 0.40 1.15 1N5294 0.638 0.75 0.863 1.15 0.335 1.20 1N5295 0.697 0.82 0.943 1.00 0.29 1.25 1N5296 0.774 0.91 1.05 0.88 0.24 1.29 1N5297 0.850 1.00 1.15 0.80 0.205 1.35 1N5298 0.935 1.10 1.27 0.70 0.18 1.40 Notes: (1) Pulsed Method: Pulse Width (ms) = 27.5 divided by IP NOM (mA) R4 (7-February 2013)
The CENTRAL SEMICONDUCTOR 1N5283 series types are silicon field effect current regulator diodes designed for applications requiring a constant current over a wide voltage range. These devices are manufactured in the cost effective DO-35 double plug case which provides many benefits to the user, including space savings and improved thermal characteristics. Special selections of IP (regulator current) are available for critical applications.
DO-35 CASE FEATURES:
• High Reliability • Superior Lot To Lot Consistency • Special Selections Available • Surface Mount Devices Available
MAXIMUM RATINGS:
(TL=75°C)
SYMBOL UNITS
Peak Operating Voltage POV 100 V Power Dissipation PD 600 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
Regulator Minimum Minimum Maximum Current Dynamic Knee Limiting (Note 1) Impedance Impedance Voltage Type IP @ VT=25V ZT @ VT=25V ZK @ VK=6.0V VL @ IL=0.8 x IP MIN MIN NOM MAX MΩ MΩ V mA mA mA
1N5283 0.187 0.22 0.253 25 2.75 1.0 1N5284 0.204 0.24 0.276 19 2.35 1.0 1N5285 0.230 0.27 0.311 14 1.95 1.0 1N5286 0.255 0.30 0.345 9.0 1.60 1.0 1N5287 0.281 0.33 0.380 6.6 1.35 1.0 1N5288 0.332 0.39 0.449 4.1 1.00 1.05 1N5289 0.366 0.43 0.495 3.3 0.87 1.05 1N5290 0.400 0.47 0.541 2.7 0.75 1.05 1N5291 0.476 0.56 0.644 1.90 0.56 1.10 1N5292 0.527 0.62 0.713 1.55 0.47 1.13 1N5293 0.578 0.68 0.782 1.35 0.40 1.15 1N5294 0.638 0.75 0.863 1.15 0.335 1.20 1N5295 0.697 0.82 0.943 1.00 0.29 1.25 1N5296 0.774 0.91 1.05 0.88 0.24 1.29 1N5297 0.850 1.00 1.15 0.80 0.205 1.35 1N5298 0.935 1.10 1.27 0.70 0.18 1.40 Notes: (1) Pulsed Method: Pulse Width (ms) = 27.5 divided by IP NOM (mA) R4 (7-February 2013)