Preliminary Datasheet EPC2302 (Efficient Power Conversion) - 4

eGaN® FET DATASHEET
EPC2302
Figure 6: Typical Output Charge and COSS Stored Energy Figure 7: Typical Gate Charge
5 120 5.00

I 4 D = 50 A V
µJ)
DS = 50 V 90 3.75 3 2.50
Stored Energy (
60
OSS
2
– Output charge (nC) — C – Gate-to-Source Voltage (V) Q OSS
1.25
E OSS V GS
30 1 0 0.00 0 0 20 40 60 80 100 0 5 10 15 20 25
V QG – Gate Charge (nC) DS – Drain-to-Source Voltage (V) Figure 8: Typical Reverse Drain-Source Characteristics Figure 9: Typical Normalized On-State Resistance vs. Temp.
400 2.5 350 25˚C
DS(on)
125˚C I 300 D = 50 A VGS = 0 V 2.0 VGS = 5 V 250 200 1.5 150
– Source-to-Drain Current (A)
100 1.0
I SD Normalized On-State Resistance R
50 0 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 25 50 75 100 125 150
VSD – Source-to-Drain Voltage (V) TJ – Junction Temperature (°C) Figure 10: Typical Normalized Threshold Voltage vs. Temp. Figure 11: Safe Operating Area
1000 1.50 I Limited by R D = 14 mA 100 DS(on) 1.25 10 1.00
– Drain Current (A)
Pulse Width
I D
1 ms 1 100 ms
Normalized Threshold Voltage
1.75 10 ms 100 µs 1 ms 100 µs 10 µs 0.50 0.1 0 25 50 75 100 125 150 0.1 1 10 100 1000
TJ – Junction Temperature (°C) VDS – Drain-Source Voltage (V) T = Max Rated, T = +25°C, Single Pulse J C
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