Preliminary Datasheet EPC23101 (Efficient Power Conversion) - 4

HerstellerEfficient Power Conversion
BeschreibungePower Chipset 100 V, 65 A
Seiten / Seite9 / 4 — eGaN® FET DATASHEET. Absolute Maximum Ratings. SYMBOL. PARAMETER. MIN. …
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DokumentenspracheEnglisch

eGaN® FET DATASHEET. Absolute Maximum Ratings. SYMBOL. PARAMETER. MIN. MAX. UNITS. ESD Ratings. Thermal Characteristics. TYP

eGaN® FET DATASHEET Absolute Maximum Ratings SYMBOL PARAMETER MIN MAX UNITS ESD Ratings Thermal Characteristics TYP

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eGaN® FET DATASHEET
EPC23101
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur and device reliability may be affected. All voltage parameters are absolute voltages referenced to GND unless indicated otherwise.
Absolute Maximum Ratings SYMBOL PARAMETER MIN MAX UNITS
VIN Input Voltage (VIN to GND) 100 VSW(continuous) Output Switching Node (SW to GND), Continuous 100 VDRV External Bias Supply (VDRV to GND) 6 VDD Internal Low Side Supply Voltage (VDD to GND) 6 V VBOOT – VSW Internal High Side Supply Voltage (VBOOT to SW) 6 LGOUT Low Side Gate Drive Output (LGOUT to GND) 6 HSIN, LSIN PWM Logic Inputs 5.5 EN VDD Disable Input 5.5 TJ Junction Temperature 150 °C TSTG Storage Temperature -55 150
ESD Ratings ESD Ratings SYMBOL PARAMETER MIN MAX UNITS
HBM Human-body model (JEDEC JS-001) +/-1000 V CDM Charged-device model (JEDEC JESD22-C101) +/-500
Thermal Characteristics
RθJA_JEDEC is measured using JESD51-2 standard setup with 1 cubic foot enclosure with no forced air cooling, heat dissipated only through natural convection. The test used JEDEC Standard 4-layers PCB with 2oz top and bottom surface layers and 1oz buried layers. RθJA_EVB is measured using EPC90142 EVB with no forced air cooling, this rating is more indicative of actual application environment.
Thermal Characteristics SYMBOL PARAMETER TYP UNITS
RθJC_Top Thermal Resistance, Junction-to-Case (Top surface of exposed die substrate) 0.4 RθJB_Bottom Thermal Resistance, Junction-to-Board (At solder joints of VIN and SW PCB pads) 3 °C/W RθJA_JEDEC Thermal Resistance, Junction-to-Ambient (using JEDEC 51-2 PCB) 43 RθJA_EVB Thermal Resistance, Junction-to-Ambient (using EPC90142 EVB) 25
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. All voltage parameters are absolute voltages referenced to GND unless indicated otherwise.
Recommended Operating Conditions SYMBOL PARAMETER MIN TYP MAX UNITS
VIN Input Voltage (VIN to GND) 10 [3] 80 VSW(Q3 Mode) Output Switch Node, 3rd Quadrant Mode [4] -2.5 VIN + 2.5 VSW(pulse2ns) Output Switch Node, Transient PW<2 ns [5] -10 VIN +10 VDRV External Bias Supply (VDRV to GND) 4.75 5 5.5 V V DD Internal Low Side Supply Voltage (VDD to GND) 4.75 5 5.5 VBOOT – VSW Internal High Side Supply Voltage (VBOOT to SW) 4.75 5 5.5 LGOUT Low Side Gate Drive Output (LGOUT to GND) 4.75 5 5.5 HSIN, LSIN PWM Logic Inputs [6] 0 5 EN VDD Disable Input [3] 0 5 TJ Operating Junction Temperature -40 125 °C EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2021 | | 4