Datasheet CBRSDSH2-60 (Central Semiconductor)
| Hersteller | Central Semiconductor |
| Beschreibung | SURFACE MOUNT 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER |
| Seiten / Seite | 5 / 1 — CBRSDSH2-60. SURFACE MOUNT. w w w. c e n t r a l s e m i . c o m. 2 AMP … |
| Dateiformat / Größe | PDF / 566 Kb |
| Dokumentensprache | Englisch |
CBRSDSH2-60. SURFACE MOUNT. w w w. c e n t r a l s e m i . c o m. 2 AMP SILICON. DESCRIPTION:. SCHOTTKY BRIDGE RECTIFIER
Modelllinie für dieses Datenblatt
Textversion des Dokuments
CBRSDSH2-60 SURFACE MOUNT w w w. c e n t r a l s e m i . c o m 2 AMP SILICON DESCRIPTION: SCHOTTKY BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBRSDSH2-60 is a full wave bridge rectifier mounted in a durable epoxy surface mount case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER FEATURES: •
Low Leakage Current (70μA MAX @ VRRM)
•
Low VF Schottky Diodes (600mV MAX @ IF=2.0A)
SMDIP CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 60 V DC Blocking Voltage VR 60 V RMS Reverse Voltage VR(RMS) 42 V Average Forward Current IO 2.0 A Peak Forward Surge Current (8.3ms) IFSM 110 A Operating and Storage Junction Temperature TJ, Tstg -50 to +125 °C Typical Thermal Resistance (Note 1) ΘJA 40 °C/W Typical Thermal Resistance ΘJL 15 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=60V 30 70 μA VF IF=2.0A 600 mV CJ VR=4.0V, f=1.0MHz 300 500 pF Notes: (1) Devices mounted on PCB with 13mm x 13mm copper pads. R1 (28-November 2011)
The CENTRAL SEMICONDUCTOR CBRSDSH2-60 is a full wave bridge rectifier mounted in a durable epoxy surface mount case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER FEATURES: •
Low Leakage Current (70μA MAX @ VRRM)
•
Low VF Schottky Diodes (600mV MAX @ IF=2.0A)
SMDIP CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 60 V DC Blocking Voltage VR 60 V RMS Reverse Voltage VR(RMS) 42 V Average Forward Current IO 2.0 A Peak Forward Surge Current (8.3ms) IFSM 110 A Operating and Storage Junction Temperature TJ, Tstg -50 to +125 °C Typical Thermal Resistance (Note 1) ΘJA 40 °C/W Typical Thermal Resistance ΘJL 15 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=60V 30 70 μA VF IF=2.0A 600 mV CJ VR=4.0V, f=1.0MHz 300 500 pF Notes: (1) Devices mounted on PCB with 13mm x 13mm copper pads. R1 (28-November 2011)