Datasheet CBRHD-01 (Central Semiconductor)
| Hersteller | Central Semiconductor |
| Beschreibung | Surface mount SILICON HIGH DENSITY 0.8 AMP BRIDGE RECTIFIER |
| Seiten / Seite | 3 / 1 — CBRHD-01. SURFACE MOUNT SILICON. www.centra lsemi.com. HIGH DENSITY. 0.8 … |
| Dateiformat / Größe | PDF / 440 Kb |
| Dokumentensprache | Englisch |
CBRHD-01. SURFACE MOUNT SILICON. www.centra lsemi.com. HIGH DENSITY. 0.8 AMP. DESCRIPTION:. BRIDGE RECTIFIER. MARKING CODE: CBD1
Modelllinie für dieses Datenblatt
Textversion des Dokuments
CBRHD-01 SURFACE MOUNT SILICON www.centra lsemi.com HIGH DENSITY 0.8 AMP DESCRIPTION: BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBRHD-01 is a silicon full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODE: CBD1 FEATURES: •
Efficient use of board space: requires only 42mm2 of board space vs. 120mm2 of board space needed for industry standard 1.0 Amp surface mount bridge rectifier.
HD DIP CASE •
50% higher density (Amps/mm2) than the industry standard 1.0 Amp surface mount bridge rectifier.
•
Glass passivated chips for high reliability.
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 100 V DC Blocking Voltage VR 100 V RMS Reverse Voltage VR(RMS) 70 V Average Forward Current (TA=40°C) (Note1) IO 0.5 A Average Forward Current (TA=40°C) (Note 2) IO 0.8 A Peak Forward Surge Current IFSM 30 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance (Note 3) ΘJA 85 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR= 100V 5.0 µA IR VR= 100V, TA=125°C 500 µA VF IF=400mA 1.0 V CJ VR=4.0V, f=1.0MHz 9.0 pF Notes: (1) Mounted on Glass-Epoxy PCB. (2) Mounted on Ceramic PCB. (3) Mounted on PCB with 0.5” x 0.5” copper pads. R4 (19-August 2020)
The CENTRAL SEMICONDUCTOR CBRHD-01 is a silicon full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODE: CBD1 FEATURES: •
Efficient use of board space: requires only 42mm2 of board space vs. 120mm2 of board space needed for industry standard 1.0 Amp surface mount bridge rectifier.
HD DIP CASE •
50% higher density (Amps/mm2) than the industry standard 1.0 Amp surface mount bridge rectifier.
•
Glass passivated chips for high reliability.
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 100 V DC Blocking Voltage VR 100 V RMS Reverse Voltage VR(RMS) 70 V Average Forward Current (TA=40°C) (Note1) IO 0.5 A Average Forward Current (TA=40°C) (Note 2) IO 0.8 A Peak Forward Surge Current IFSM 30 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance (Note 3) ΘJA 85 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR= 100V 5.0 µA IR VR= 100V, TA=125°C 500 µA VF IF=400mA 1.0 V CJ VR=4.0V, f=1.0MHz 9.0 pF Notes: (1) Mounted on Glass-Epoxy PCB. (2) Mounted on Ceramic PCB. (3) Mounted on PCB with 0.5” x 0.5” copper pads. R4 (19-August 2020)