Datasheet SI2308DS (Vishay) - 4
| Hersteller | Vishay |
| Beschreibung | N-Channel 60-V (D-S) MOSFET |
| Seiten / Seite | 5 / 4 — Si2308DS. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. … |
| Dateiformat / Größe | PDF / 84 Kb |
| Dokumentensprache | Englisch |
Si2308DS. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage
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Si2308DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 10 0.6 0.5 ) Ω 0.4 TJ = 150 °C 0.3 - On-Resistance ( ID = 2.0 A - Source Current (A) 0.2 I S DS(on)R TJ = 25 °C 0.1 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.4 12 ID = 250 µA 0.2 9 0.0 riance (V) a - 0.2 V er (W) 6 w o P GS(th) - 0.4 V 3 - 0.6 - 0.8 0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power
2 1 Duty Cycle = 0.5 ransient 0.2 e T 0.1 fectiv mal Impedance 0.1 ed Ef 0.05 Ther maliz 0.02 Nor Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 500 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70797. www.vishay.com Document Number: 70797 4 S09-0133-Rev. D, 02-Feb-09
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 10 0.6 0.5 ) Ω 0.4 TJ = 150 °C 0.3 - On-Resistance ( ID = 2.0 A - Source Current (A) 0.2 I S DS(on)R TJ = 25 °C 0.1 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.4 12 ID = 250 µA 0.2 9 0.0 riance (V) a - 0.2 V er (W) 6 w o P GS(th) - 0.4 V 3 - 0.6 - 0.8 0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power
2 1 Duty Cycle = 0.5 ransient 0.2 e T 0.1 fectiv mal Impedance 0.1 ed Ef 0.05 Ther maliz 0.02 Nor Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 500 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70797. www.vishay.com Document Number: 70797 4 S09-0133-Rev. D, 02-Feb-09