Datasheet IRL540 (Vishay)
| Hersteller | Vishay |
| Beschreibung | Power MOSFET |
| Seiten / Seite | 9 / 1 — IRL540. Power MOSFET. FEATURES. TO-220AB. Note. PRODUCT SUMMARY. … |
| Dateiformat / Größe | PDF / 259 Kb |
| Dokumentensprache | Englisch |
IRL540. Power MOSFET. FEATURES. TO-220AB. Note. PRODUCT SUMMARY. DESCRIPTION. ORDERING INFORMATION. ABSOLUTE MAXIMUM RATINGS
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRL540
www.vishay.com Vishay Siliconix
Power MOSFET FEATURES
D • Dynamic dV/dt rating
TO-220AB
• Repetitive avalanche rated Available • Logic-level gate drive Available • RDS(on) specified at VGS = 4 V and 5 V G • 175 °C operating temperature • Fast switching S • Ease of paralleling D G S • Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For
PRODUCT SUMMARY
example, parts with lead (Pb) terminations are not RoHS-compliant. V Please see the information / tables in this datasheet for details DS (V) 100 RDS(on) (Ω) VGS = 5.0 V 0.077
DESCRIPTION
Qg (Max.) (nC) 64 Third generation power MOSFETs from Vishay provide the Qgs (nC) 9.4 designer with the best combination of fast switching, ruggedized device design, low on-resistance and Qgd (nC) 27 cost-effectiveness. Configuration Single The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB Lead (Pb)-free IRL540PbF Lead (Pb)-free and halogen-free IRL540PbF-BE3
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 100 V Gate-source voltage VGS ± 10 T 28 Continuous drain current V C = 25 °C GS at 5 V ID T A C = 100 °C 20 Pulsed drain current a IDM 110 Linear derating factor 1.0 W/°C Single pulse avalanche energy b EAS 440 mJ Repetitive avalanche current a IAR 28 A Repetitive avalanche energy a EAR 15 mJ Maximum power dissipation TC = 25 °C PD 150 W Peak diode recovery dV/dt c dV/dt 5.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +175 °C Soldering recommendations (peak temperature) d For 10 s 300 d 10 lbf · in Mounting torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 841 μH, Rg = 25 Ω, IAS = 28 A (see fig. 12c) c. ISD ≤ 28 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case S21-1046-Rev. C, 25-Oct-2021
1
Document Number: 91300 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET FEATURES
D • Dynamic dV/dt rating
TO-220AB
• Repetitive avalanche rated Available • Logic-level gate drive Available • RDS(on) specified at VGS = 4 V and 5 V G • 175 °C operating temperature • Fast switching S • Ease of paralleling D G S • Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For
PRODUCT SUMMARY
example, parts with lead (Pb) terminations are not RoHS-compliant. V Please see the information / tables in this datasheet for details DS (V) 100 RDS(on) (Ω) VGS = 5.0 V 0.077
DESCRIPTION
Qg (Max.) (nC) 64 Third generation power MOSFETs from Vishay provide the Qgs (nC) 9.4 designer with the best combination of fast switching, ruggedized device design, low on-resistance and Qgd (nC) 27 cost-effectiveness. Configuration Single The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB Lead (Pb)-free IRL540PbF Lead (Pb)-free and halogen-free IRL540PbF-BE3
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 100 V Gate-source voltage VGS ± 10 T 28 Continuous drain current V C = 25 °C GS at 5 V ID T A C = 100 °C 20 Pulsed drain current a IDM 110 Linear derating factor 1.0 W/°C Single pulse avalanche energy b EAS 440 mJ Repetitive avalanche current a IAR 28 A Repetitive avalanche energy a EAR 15 mJ Maximum power dissipation TC = 25 °C PD 150 W Peak diode recovery dV/dt c dV/dt 5.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +175 °C Soldering recommendations (peak temperature) d For 10 s 300 d 10 lbf · in Mounting torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 841 μH, Rg = 25 Ω, IAS = 28 A (see fig. 12c) c. ISD ≤ 28 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case S21-1046-Rev. C, 25-Oct-2021
1
Document Number: 91300 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000